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Semiconductor Science and Technology latest papers



Essential reading for all those involved in semiconductor research and applications. SST covers properties of bulk, low-dimensional and amorphous semiconductors, computational semiconductor physics, crystal growth and preparation of materials, layer and d



Published: Thu, 01 Jan 1970 00:00:00 GMT

Last Build Date: Thu, 01 Jan 1970 00:00:00 GMT

Copyright: Copyright © IOP Publishing 2011
 



A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage

Tue, 05 Jul 2011 23:00:00 GMT

Author(s): S E Jamali Mahabadi, Ali A Orouji, P Keshavarzi and Hamid Amini Moghadam
Affiliation(s): Electrical Engineering Department, Semnan University, Semnan, Iran



Resonance Coulomb scattering by shallow donor impurities in GaAs and InP

Tue, 05 Jul 2011 23:00:00 GMT

Author(s): V Ya Aleshkin and D I Burdeiny
Affiliation(s): Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, Nizhny Novgorod, 603950, Russia



Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading

Tue, 05 Jul 2011 23:00:00 GMT

Author(s): Ya Ya Kudryk and A V Zinovchuk
Affiliation(s): V. Lashkaryov Institute of Semiconductor Physics, 03028 Kyiv, Ukraine; Ivan Franko Zhytomyr State University, 10008 Zhytomyr, Ukraine



Optoelectronic and thermal characteristics of GaN-based monolithic light emitting diode arrays

Tue, 05 Jul 2011 23:00:00 GMT

Author(s): Hee Kwan Lee and Jae Su Yu
Affiliation(s): Department of Electronics and Radio Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701, Korea



Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

Tue, 05 Jul 2011 23:00:00 GMT

Author(s): Haifeng Pu, Guifeng Li, Jiahan Feng, Baoying Liu and Qun Zhang
Affiliation(s): Department of Materials Science, Fudan University, Shanghai 200433, People's Republic of China



Variable-range hopping conduction and metal–insulator transition in amorphous RexSi1−x thin films

Tue, 05 Jul 2011 23:00:00 GMT

Author(s): K G Lisunov, H Vinzelberg, E Arushanov and J Schumann
Affiliation(s): Institute of Applied Physics, Academy of Sciences of Moldova, 277028 Chisinau, Moldova; Leibniz-Institut fur Festkorper- und Werkstoffforschung Dresden - IFW Dresden, Helmholtzstr.20, D-01069 Dresden, Germany



Fabrication and theoretical analysis of GaN-based vertical light-emitting diodes with SiO2 current blocking layer

Tue, 05 Jul 2011 23:00:00 GMT

Author(s): Seong-Ju Bae, JeHyuk Choi, Dong-Hyun Kim, In-Chan Ju, Chan-Soo Shin, Chul-Gi Ko and Jae-Su Yu
Affiliation(s): Technology Development Department, Korea Advanced Nano Fab Center (KANC), 906-10 Iui-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do, Korea; Department of Electronics and Radio Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701, Korea



Variable wavelength photocurrent mapping on PbS quantum dot: fullerene thin films by conductive atomic force microscopy

Tue, 05 Jul 2011 23:00:00 GMT

Author(s): M Madl, W Brezna, B Basnar, M Yarema, W Heiss and J Smoliner
Affiliation(s): Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7, 1410 Vienna, Austria; Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenbergstr 69, 4040 Linz, Austria



Enhanced photocatalytic activity of mesoporous S-N-codoped TiO2 loaded with Ag nanoparticles

Mon, 27 Jun 2011 23:00:00 GMT

Author(s): Yi Xie, Jongmin Kum, Xiujian Zhao and Sung Oh Cho
Affiliation(s): State Key Laboratory of Silicate Materials for Architectures (Wuhan University of Technology), Wuhan, Hubei, 430070, People's Republic of China; Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong, Yuseong, Daejeon 305-701, Korea



Theoretical investigation of a surface-emitting superluminescent diode with a circular grating

Mon, 27 Jun 2011 23:00:00 GMT

Author(s): Qi An, Jiandong Lin, Peng Jin and Zhanguo Wang
Affiliation(s): Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People's Republic of China; State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People's Republic of China