Tue, 26 May 2015 08:00:00 EDTThis invention concerns real-time multi-impairment signal performance monitoring. In particular it concerns an optical device, for instance a monolithic integrated photonics chip, comprising a waveguide having an input region to receive a signal for characterization, and a narrow band CW laser signal. A non-linear waveguide region to mix the two received signals. More than one output region, each equipped with bandpass filters that extract respective discrete frequency bands of the RF spectrum of the mixed signals. And, also comprising (slow) power detectors to output the extracted discrete frequency banded signals.
Tue, 26 May 2015 08:00:00 EDTA method for manufacturing keycap includes applying a first coating layer on a surface of a keycap layer, applying a second coating layer on top of the first coating layer, etching at least a portion of the first coating layer to a first depth to form a first etched area, and etching at least a portion of the first etched area to a second depth to form a second etched area.
Tue, 26 May 2015 08:00:00 EDTA contact structure and assembly and a method for manufacturing the same for a microelectronics device includes first and second electrically conductive contacts being helically shaped. A carrier element is attached to and positioned between the first and second contacts. The first and second contacts are in electrical communication with each other, and the first and second contacts are in a mirror image relationship with each other. A pair of insulating substrates each include electrically conductive members. A contact point on each of the first and second contacts is attached and electrically communicating to respective electrically conductive members such that the first and second electrically conductive contacts between the pair of insulating substrates form an electrically conductive package. A metal layer on the carrier element provides electrical conductivity through a first opening defined by the carrier element between the first and second portions of the helix shaped contact.
Tue, 26 May 2015 08:00:00 EDTA capacitive transparent conductive film comprises: a transparent substrate, comprises a first surface and a second surface which is opposite to the first surface; a light-shield layer, formed at the edge of the first surface of the transparent substrate, the light-shield layer forms a non-visible region on the first surface of the transparent substrate; and a polymer layer, formed on the first surface of the transparent substrate, and covering the light-shield layer, the surface of the polymer layer is patterned to form a meshed trench, the trench is filled with conductive material to form a sensing region on the surface of the polymer layer. The capacitive transparent conductive film can effectively protect the conductive material and has low cost and good conductivity. A preparation method of the capacitive transparent conductive film is also provided.
Tue, 26 May 2015 08:00:00 EDTA method for processing a silicon wafer is provided. The method includes allowing an etchant to flow along a surface of the silicon wafer to form a line in which a plurality of apertures are arranged in a flow direction of the etchant from an upstream side to a downstream side. The apertures arranged in the line include a first aperture formed on the most upstream side and a second aperture formed downstream of the first aperture in the flow direction of the etchant. The first aperture and the second aperture are subjected to different processes after being formed.
Tue, 26 May 2015 08:00:00 EDTHemispheres and spheres are formed and employed for a plurality of applications. Hemispheres are employed to form a substrate having an upper surface and a lower surface. The upper surface includes peaks of pillars which have a base attached to the lower surface. The peaks have a density defined at the upper surface by an array of hemispherical metal structures that act as a mask during an etch to remove substrate material down to the lower surface during formation of the pillars. The pillars are dense and uniform and include a microscale average diameter. The spheres are formed as independent metal spheres or nanoparticles for other applications.
Tue, 26 May 2015 08:00:00 EDTA method of plasma etching a silicon carbide workpiece includes forming a mask on a surface of the silicon carbide workpiece, performing an initial plasma etch on the masked surface using a first set of process conditions, wherein the plasma is produced using an etchant gas mixture which includes i) oxygen and ii) at least one fluorine rich gas which is present in the etchant gas mixture at a volume ratio of less than 50%, and subsequently performing a bulk plasma etch process using a second set of process conditions which differ from the first set of process conditions.
Tue, 26 May 2015 08:00:00 EDTThis method for texturing a DLC coating comprises depositing a single layer of balls or spheres on the free surface of the DLC coating; dry-etching the DLC coating using oxygen plasma; and lastly, cleaning the surface of said coating by eliminating the balls or spheres.
Tue, 26 May 2015 08:00:00 EDTProvided is a polishing slurry composition, including a non-ionic surfactant represented by the following formula (1) R—(OCH2CH2)x—OH formula (1) wherein x is an integer from 1 to 50, and R is selected from a group consisting of a C3-C50 alkyl group, a C6-C55 benzylalkyl group and a C6-C55 phenylalkyl group.
Tue, 26 May 2015 08:00:00 EDTA method is provided for manufacturing a component. The method includes forming a diffusion coating on a first intermediate article formed by an additive manufacturing process. The diffusion coating is removed from the first intermediate article forming a second intermediate article. The diffusion coating is formed by applying a layer of coating material on at least one surface of the first intermediate article and diffusion heat treating the first intermediate article and the layer. The diffusion coating comprises a surface additive layer and a diffusion layer below the surface additive layer. The formation of the diffusion coating and removal thereof may be repeated at least once.
Tue, 26 May 2015 08:00:00 EDTA method for removing copper-oxide from copper powder, the method comprising: providing a copper powder defined by each particle having a copper core and a copper-oxide layer surrounding the copper core; disposing the particles in an etching solution in a container, wherein the etching solution removes the copper-oxide layer from each particle; decanting the etching solution and by-products; washing the particles; disposing the washed particles in an organic solvent; coating each copper core with an organic material from the organic solvent; dispersing the particles in the organic solvent; and providing the copper powder as dispersed copper cores that are absent a copper-oxide layer and have an organic coating, wherein the steps of dispersing in the etching solution, decanting, washing, disposing in the organic solvent, coating, and dispersing are performed in situ with the plurality of particles disposed in liquid, absent any exposure of the copper cores to air.
Tue, 26 May 2015 08:00:00 EDTDisclosed are etching solution compositions that comprise fluorine compounds and iron ions, which are used for bulk etching of metal laminate films wherein a layer comprising aluminum or an aluminum alloy is laminated on top and a layer comprising titanium or a titanium alloy on bottom, and an etching method using said etching solution compositions.
Tue, 26 May 2015 08:00:00 EDTThe invention provides a chemical-mechanical polishing composition containing wet-process silica, an oxidizing agent that oxidizes nickel-phosphorous, a chelating agent, polyvinyl alcohol, and water. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
Tue, 26 May 2015 08:00:00 EDTIn a semiconductor device manufacturing method, a target object including a multilayer film and a mask formed on the multilayer film is prepared in a processing chamber of a plasma processing apparatus. The multilayer film is formed by alternately stacking a silicon oxide film and a silicon nitride film. The multilayer film is etched by supplying a processing gas containing hydrogen gas, hydrogen bromide gas, nitrogen trifluoride gas and at least one of hydrocarbon gas, fluorohydrocarbon gas and fluorocarbon gas into the processing chamber of the plasma processing apparatus and generating a plasma of the processing gas in the processing chamber.
Tue, 26 May 2015 08:00:00 EDTA plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.
Tue, 26 May 2015 08:00:00 EDTMethods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure. The method includes generating a primary plasma from a primary feed gas in the primary plasma generating region. The method also includes generating a secondary plasma from a secondary feed gas in the secondary plasma generating region to enable at least some species from the secondary plasma to migrate into the primary plasma generating region. The method additionally includes etching the substrate with the primary plasma after the primary plasma has been augmented with migrated species from the secondary plasma.
Tue, 26 May 2015 08:00:00 EDTThe present invention provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a microwave power generator coupled to the to the chamber body through a waveguild, and one or more coils or magnets disposed around an outer circumference of the chamber body adjacent to the waveguide, and a gas source coupled to the waveguide through a gas delivery passageway.
Tue, 26 May 2015 08:00:00 EDTThere is provided a plasma etching method for forming a hole in a silicon oxide film formed on an etching stopper layer. The plasma etching method includes a main etching process for etching the silicon oxide film; and an etching process that is performed when at least a part of the etching stopper layer is exposed after the main etching process. The etching process includes a first etching process using a gaseous mixture of a C4F6 gas, an Ar gas and an O2 gas as the processing gas; and a second etching process using a gaseous mixture of a C4F8 gas, an Ar gas and an O2 gas or a gaseous mixture of a C3F8 gas, an Ar gas and an O2 gas as the processing gas. The first etching process and the second etching process are alternately performed plural times.
Tue, 26 May 2015 08:00:00 EDTA method of smoothing the sidewalls of an etched feature using reactive plasma milling. The method of smoothing reduces the depth of sidewall notching, which causes the roughness on the feature wall surface. The method comprises removing residual polymeric materials from the interior and exterior surfaces of said silicon-comprising feature and treating the interior surface of the silicon-comprising feature with a reactive plasma generated from a source gas while the silicon-comprising feature is biased with a pulsed RF power. The source gas includes a reagent which reacts with the silicon and an inert gas. The method provides a depth of a notch on the interior surface of about 500 nm or less.
Tue, 26 May 2015 08:00:00 EDTA method is described for improving the uniformity over a predetermined substrate area of a spectral response of photonic devices fabricated in a thin device layer. The method includes (i) establishing an initial device layer thickness map for the predetermined area, (ii) establishing a linewidth map for the predetermined area, and (iii) establishing an etch depth map for the predetermined area. The method further includes, based on the initial device layer thickness map, the linewidth map and the etch depth map, calculating an optimal device layer thickness map and a corresponding thickness correction map for the predetermined substrate area taking into account photonic device design data. Still further, the method includes performing a location specific corrective etch process in accordance with the thickness correction map.
Tue, 26 May 2015 08:00:00 EDTA method for producing an antireflection coating on a substrate is specified. A first nanostructure in a first material is formed using by means of a first plasma etching process. The first material is the material of the substrate or the material of a layer made of a first organic material applied onto the substrate. A layer made of a second material is applied onto the first nanostructure, the second material is an organic material. A second nanostructure is formed in the layer made of the second material using a second plasma etching process. The second material has a higher etching rate than the first material when carrying out the second plasma etching process.
Tue, 26 May 2015 08:00:00 EDTA method of forming a lighting system comprises providing a cavity having at least a first array of first optical elements and a second array of second optical elements that have a different shape than the first array, filling the cavity with a curable resin, applying a secondary optical element to the curable resin in alignment with the first optical array, curing the resin to form a cured assembly, and removing the cured assembly from the cavity.
Tue, 26 May 2015 08:00:00 EDTDisclosed is a liquid processing apparatus capable of accurately determining a holding state of a substrate without being influenced by, for example, material or surface condition of a substrate. The liquid processing apparatus includes a substrate holding unit that holds a substrate, a camera that photographs a region where a peripheral edge portion of substrate is present when substrate is properly held by the substrate holding unit, and a control unit that determines a holding state of the substrate held by the substrate holding unit based on an image photographed by the camera.
Tue, 19 May 2015 08:00:00 EDTA method of etching a substrate by plasma via a mask having a predetermined pattern at back of a silicon layer of the substrate, a semiconductor device being formed at front of which supported by a support substrate, includes a main etching step in which plasma is generated by supplying a process gas including a mixed gas whose flow ratio of fluorine compound gas, oxygen gas and silicon fluoride gas is 2:1:1.5 or a process gas including a mixed gas in which at least the ratio of one of the oxygen gas and the silicon fluoride gas, using the fluorine compound gas as a standard, is larger than the above ratio, and the substrate is etched by the plasma; and an over etching step in which the substrate is further etched by plasma while applying a high frequency for bias whose frequency is less than or equal to 400 kHz.
Tue, 19 May 2015 08:00:00 EDTA method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. Reactants thereby produced etch the patterned heterogeneous structures to remove two separate regions of differing silicon oxide at different etch rates. The methods may be used to remove low density silicon oxide while removing less high density silicon oxide.
Tue, 19 May 2015 08:00:00 EDTDisclosed are methods for making read sensors using developable bottom anti-reflective coating and amorphous carbon (a-C) layers as junction milling masks. The methods described herein provide an excellent chemical mechanical polishing or planarization (CMP) stop, and improve control in reader critical physical parameters, shield to shield spacing (SSS) and free layer track width (FLTW).
Tue, 19 May 2015 08:00:00 EDTA microfluidic cartridge having a microfluidic channel may have at least one surface that has been roughened, etched or otherwise treated to alter its surface characteristics. In some instances, a microfluidic cartridge may have a microfluidic channel that is configured to provide even distribution of a lysing reagent across the channel. The surface may be roughened or etched using a laser, an abrasive, application of a solvent or in any other suitable manner.
Tue, 19 May 2015 08:00:00 EDTA wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.
Tue, 19 May 2015 08:00:00 EDTA method of forming an implant to be implanted into living bone is disclosed. The method comprises the act of roughening at least a portion of the implant surface to produce a microscale roughened surface. The method further comprises the act of immersing the microscale roughened surface into a solution containing hydrogen peroxide and a basic solution to produce a nanoscale roughened surface consisting of nanopitting superimposed on the microscale roughened surface. The nanoscale roughened surface has a property that promotes osseointegration.
Tue, 19 May 2015 08:00:00 EDTThe present invention relates to a method of producing a diamond surface including the steps of providing an original diamond surface, subjecting the original diamond surface to plasma etching to remove at least 2 nm of material from the original surface and produce a plasma etched surface, the roughness Rq of the plasma etched surface at the location of the etched surface where the greatest depth of material has been removed satisfying at least one of the following conditions: Rq of the plasma etched surface is less than 1.5 times the roughness of Rq of the original surface, or Rq of the plasma etched surface is less than 1 nm.
Tue, 19 May 2015 08:00:00 EDTA machined ceramic article having an initial surface defect density and an initial surface roughness is provided. The machined ceramic article is heated to a temperature range between about 1000° C. and about 1800° C. at a ramping rate of about 0.1° C. per minute to about 20° C. per minute. The machined ceramic article is heat-treated in air atmosphere. The machined ceramic article is heat treated at one or more temperatures within the temperature range for a duration of up to about 24 hours. The machined ceramic article is then cooled at the ramping rate, wherein after the heat treatment the machined ceramic article has a reduced surface defect density and a reduced surface roughness.
Tue, 19 May 2015 08:00:00 EDTA plasma etching method using a plasma etching apparatus including a lower electrode and an upper electrode is provided. The plasma etching method includes a first etching step of performing plasma etching using a first process gas and a second etching step of performing the plasma etching using a second process gas. The adhesion of a radical of the second process gas to an object of processing is less than the adhesion of a radical of the first process gas to the object of processing. While alternately repeating a first condition of turning on high-frequency electric power for plasma generation and a second condition of turning off the high-frequency electric power, the second etching step applies a negative direct-current voltage to the upper electrode so that the absolute value of the applied voltage is greater in a period of the second condition than in a period of the first condition.
Tue, 19 May 2015 08:00:00 EDTThe disclosure relates generally to a method for fabricating a patterned medium. The method includes providing a substrate with an exterior layer under a lithographically patterned surface layer, the lithographically patterned surface layer comprising a first pattern in a first region and a second pattern in a second region, applying a first masking material over the first region, transferring the second pattern into the exterior layer in the second region, forming self-assembled block copolymer structures over the lithographically patterned surface layer, the self-assembled block copolymer structures aligning with the first pattern in the first region, applying a second masking material over the second region, transferring the polymer block pattern into the exterior layer in the first region, and etching the substrate according to the second pattern transferred to the exterior layer in the second region and the polymer block pattern transferred to the exterior layer in the first region.
Tue, 19 May 2015 08:00:00 EDTA thin film forming apparatus and a thin film forming method using the same are disclosed. In one aspect, the thin film forming apparatus comprises a mask that includes a blocking portion and an opening. It also includes an etching source that jets an etching gas through the opening of the mask to etch a thin film according to a pattern. The mask includes a gas blower for blowing a gas around the opening so that the etching gas does not penetrate into a thin film area corresponding to the block portion. When the thin film forming apparatus is used, a normal residual area of a thin film may be safely preserved and patterning may be accurately performed. Thus, the quality of a product manufactured by using the thin film forming apparatus may be improved.
Tue, 12 May 2015 08:00:00 EDTA method and system for integrated circuit fabrication is disclosed. In an example, the method includes determining a first process parameter of a wafer and a second process parameter of the wafer, the first process parameter and the second process parameter corresponding to different wafer characteristics; determining a variation of a device parameter of the wafer based on the first process parameter and the second process parameter; constructing a model for the device parameter as a function of the first process parameter and the second process parameter based on the determined variation of the device parameter of the wafer; and performing a fabrication process based on the model.
Tue, 12 May 2015 08:00:00 EDTProcesses are described to etch metals. In an embodiment, a process may include contacting a substrate with a stripping solution to remove photoresist from the substrate to produce a stripped substrate. The stripped substrate may include a plurality of solder pillars and a plurality of metal-containing field regions disposed around the plurality of solder pillars. In an illustrative embodiment, the plurality field regions may include copper. Additionally, the process may include rinsing the stripped substrate to produce a rinsed substrate. The rinsed substrate may be substantially free of a Sn layer or a Sn oxide layer. Further, the process may include contacting the rinsed substrate with an etch solution that is capable of removing an amount of one or more metals from the plurality of field regions.
Tue, 12 May 2015 08:00:00 EDTA method for controlling thermal cycling of a faraday shield in a plasma process chamber is provided. The method includes: performing a first plasma processing operation on a first wafer in the plasma process chamber; terminating the first plasma processing operation; performing a first wafer transfer operation to transfer the first wafer out of the chamber; and, during the first wafer transfer operation, applying power to a TCP coil under a plasma limiting condition.
Tue, 12 May 2015 08:00:00 EDTMethods of depositing a tin-containing layer on a substrate are disclosed herein. In some embodiments, a method of depositing a tin-containing layer on a substrate may include flowing a tin source comprising a tin halide into a reaction volume; flowing a hydrogen plasma into the reaction volume; forming one or more tin hydrides within the reaction volume from the tin source and the hydrogen plasma; and depositing the tin-containing layer on a first surface of the substrate using the one or more tin hydrides.
Tue, 12 May 2015 08:00:00 EDTA manufacturing method of a magnetic recording medium includes follows: forming a magnetic recording layer on a substrate; forming an under layer and a metal release layer that forms an alloy with the under layer on the magnetic recording layer in this order and forming an alloyed release layer by alloying the under layer and the metal release layer; forming a mask layer on the alloyed release layer; forming a resist layer on the mask layer; providing a protrusion-recess pattern by patterning the resist layer; transferring the protrusion-recess pattern to the mask layer; transferring the protrusion-recess pattern to the alloyed release layer; transferring the protrusion-recess pattern to the magnetic recording layer; dissolving the alloyed release layer by using a stripping solution and removing a layer formed on the alloyed release layer from an upper side of the magnetic recording layer.
Tue, 05 May 2015 08:00:00 EDTA method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.
Tue, 05 May 2015 08:00:00 EDTDescribed herein are various methods for making textured articles, textured articles that have improved fingerprint resistance, and methods of using the textured articles. The methods generally make use of masks comprising nanostructured metal-containing features to produce textured surfaces that also comprise nanostructured features. These nanostructured features in the textured surfaces can render the surfaces hydrophobic and oleophobic, thereby beneficially providing the articles with improved fingerprint resistance relative to similar or identical articles that lack the texturing.
Tue, 05 May 2015 08:00:00 EDTMethods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces are disclosed herein. In one embodiment, a method includes depositing molecules of a gas onto a microfeature workpiece in the reaction chamber and selectively irradiating a first portion of the molecules on the microfeature workpiece in the reaction chamber with a selected radiation without irradiating a second portion of the molecules on the workpiece with the selected radiation. The first portion of the molecules can be irradiated to activate the portion of the molecules or desorb the portion of the molecules from the workpiece. The first portion of the molecules can be selectively irradiated by impinging the first portion of the molecules with a laser beam or other energy source.
Tue, 05 May 2015 08:00:00 EDTA double ITO structure, containing sequential layers of indium tin oxide (ITO), silicon dioxide (SiO2) (which may include a dopant material) and ITO, is selectively protected by a patterned photo-resist mask. The sequential layers are etched together in a single etching step using an etchant composition which is an acidic solution containing a transition metal chloride and hydrochloric acid (HCl). Thus, the double ITO structure is etched using a substantially fluoride-free etchant composition.
Tue, 05 May 2015 08:00:00 EDTA pickling solution for the surface pre-treatment of plastic surfaces in preparation for metallization, the solution comprising a source of Mn(VII) ions; and an inorganic acid; wherein the pickling solution is substantially free of chromium (VI) ions, alkali ions, and alkaline-earth ions.
Tue, 05 May 2015 08:00:00 EDTEmbodiments described herein generally relate to a substrate processing system and related methods, such as an etching/deposition method. The method comprises (A) depositing a protective layer on a first layer disposed on a substrate in an etch reactor, wherein a plasma source power of 4,500 Watts or greater is applied while depositing the protective layer, (B) etching the protective layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the protective layer, and (C) etching the first layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the first layer, wherein a time for the depositing a protective layer (A) comprises less than 30% of a total cycle time for the depositing a protective layer (A), the etching the protective layer (B), and the etching the first layer (C).
Tue, 05 May 2015 08:00:00 EDTThe present disclosure provides a method for manufacturing a particle source comprising: placing a metal wire in vacuum, introducing active gas, adjusting a temperature of the metal wire and applying a positive high voltage V to the metal wire to generate at a side of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than a field evaporation electric field of material for the metal wire, so that metal atoms at the top of the metal wire are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.
Tue, 05 May 2015 08:00:00 EDTA pattern forming method includes forming a pattern forming material film on a substrate as an etching target film, the pattern forming material film having an exposing section that has porosity upon exposure and a non-exposing section, patterning and exposing the pattern forming material film for the exposing section to have the porosity, selectively infiltrating a filling material into voids of the exposing section to reinforce the exposing section, and removing the non-exposing section of the pattern forming material film by dry etching to form a predetermined pattern.
Tue, 05 May 2015 08:00:00 EDTThe present disclosure pertains to a method of forming a spacer patterning mask. The method entails: providing a substrate; depositing, on the substrate, an interface layer, a core film and a first hard mask; patterning the core film and the first hard mask to form strips; depositing a spacer patterning layer to cover the core film and the first hard mask in the intermediate pattern; planarizing the spacer patterning layer by using the first hard mask in the intermediate pattern as a stop layer; etching the planarized spacer patterning layer; dry etching the second hard mask to expose the partially-etched spacer patterning layer; dry etching the exposed spacer patterning layer to form a spacer pattern; and removing the remaining first hard mask and second hard mask and the core film to obtain the final spacer patterning mask.
Tue, 05 May 2015 08:00:00 EDTIn a method of generating a nanocrystal with a core-frame structure, a seed crystal, including a first substance, is exposed to a capping agent. The seed nanocrystal has a plurality of first portions that each has a first characteristic and a plurality of second portions that each has a second characteristic, different from the first characteristic. The capping agent has a tendency to adsorb to portions having the first characteristic and has a tendency not to adsorb to portions having the second characteristic. As a result, a selectively capped seed nanocrystal is generated. The selectively capped seed nanocrystal is exposed to a second substance that has a tendency to nucleate on the plurality of second portions and that does not have a tendency to nucleate on portions that have adsorbed the capping agent, thereby generating a frame structure from the plurality of second portions of the seed nanocrystal.
Tue, 05 May 2015 08:00:00 EDTAccording to one embodiment, a pattern forming method includes forming a first guide layer on a processed film, phase-separating a first self-assembly material with the use of the first guide layer to form a first self-assembly pattern including a first polymer portion and a second polymer portion, selectively removing the first polymer portion, forming a second guide layer with the use of the second polymer portion, and phase-separating a second self-assembly material with the use of the second guide layer to form a second self-assembly pattern including a third polymer portion and a fourth polymer portion.