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Film deposition method and film deposition apparatus

Tue, 26 May 2015 08:00:00 EDT

A film deposition method includes a step of condensing hydrogen peroxide on a substrate including a concave portion formed in a surface thereof by supplying a gas containing the hydrogen peroxide, and a step of supplying a silicon-containing gas reactable with the hydrogen peroxide to the substrate having the hydrogen peroxide condensed thereon.



Resin coating device, and resin coating method

Tue, 26 May 2015 08:00:00 EDT

A translucent member 41 that has been trial-coated with a resin 8 for measurement of a light emission characteristic is placed on a translucent member placement portion 53, an excitation light that excites a phosphor is emitted from a light source unit 42 disposed above, the resin 8 coated on the translucent member 41 is irradiated with the excitation light from above, a deviation between a measurement result obtained by measuring the light emission characteristic of the light emitted from the resin 8, and a light emission characteristic specified in advance is obtained, and an appropriate resin coating amount of the resin to be coated on the LED element for actual production is derived on the basis of the deviation.



Method and device for coating components

Tue, 26 May 2015 08:00:00 EDT

A method for spraying a coating and a cold gas spray nozzle is disclosed. The method includes spraying a coating by the cold gas spray nozzle. A rinsing gas is fed to the cold gas spray nozzle during an interruption of the spraying or at an end of the spraying. Deposits in the cold gas spray nozzle are cooled and detached by the rinsing gas.



Off-center ground return for RF-powered showerhead

Tue, 26 May 2015 08:00:00 EDT

An electrical ground (36) of an RF impedance matching network (33) is connected to a connection area (50) on the grounded chamber cover (18) of a plasma chamber. The connection area is offset away from the center of the chamber cover toward a workpiece passageway (20). Alternatively, an RF power supply (30) has an electrically grounded output (32) that is connected to a connection area (52) on the chamber cover having such offset. Alternatively, an RF transmission line (37) has an electrically grounded conductor (39) that is connected between a grounded output of an RF power supply and a connection area (52) on the chamber cover having such offset.



Method of manufacturing semiconductor device and substrate processing apparatus

Tue, 26 May 2015 08:00:00 EDT

Provided is a substrate processing apparatus. The apparatus includes: a process vessel, a heater, a source gas supply system, an oxygen-containing gas supply system, a hydrogen-containing gas supply system, a pressure regulator, and a controller. The controller is configured to control the parts so as to perform: (a) forming an oxide film on a substrate by alternately repeating: (a-1) forming a layer by supplying a source gas into the process vessel accommodating the substrate; and (a-2) changing the layer into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, the inside of the process vessel being under a heated atmosphere having a low pressure; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, the inside of the process vessel being under the heated atmosphere having the low pressure.



Film deposition apparatus and substrate processing apparatus

Tue, 26 May 2015 08:00:00 EDT

A film deposition apparatus includes a processing chamber; a rotary table; process regions provided in the processing chamber and arranged apart from each other in the rotational direction of the rotary table; reaction gas supplying units configured to supply reaction gases of different types to the corresponding process regions; separation regions provided between the process regions; separation gas supplying units configured to supply a separation gas to the separation regions to separate the atmospheres of the process regions; and an exhaust path forming part having openings at positions corresponding to the process regions and configured to form exhaust paths for separately guiding the atmospheres of the process regions from the openings to the corresponding exhaust ports of the processing chamber for exhausting atmospheres of the process regions. The exhaust path forming part is configured such that positions of the openings in the rotational direction are changeable.



Device for the synthesis of nanoparticles by fluidized-bed chemical vapor deposition

Tue, 26 May 2015 08:00:00 EDT

A device for vapor deposition of chemical species on support grains of spherical or similar shape disposed in a fluidized bed. The device includes a first chamber including a fluidized bed in which a funnel-shaped fluidizer element is housed to receive support grains of spherical or similar shape; a second chamber in fluid flow connection with the first chamber to deliver precursors in a vapor phase of chemical species to be deposited on the support grains and to convey a fluidizing gas towards the first chamber; and a flute at an inlet to the fluidizer element to control distribution of the vapor phase precursors and the fluidizing gas within the fluidizer element. The distributor flute includes one or more outer grooves, each groove including a first portion oriented along the longitudinal axis of the flute and a second portion winding helically around the axis to generate a fluidizing gas vortex within the first chamber.



Plasma processing apparatus

Tue, 26 May 2015 08:00:00 EDT

The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.



Capacitive coupling plasma processing apparatus

Tue, 26 May 2015 08:00:00 EDT

A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. The second electrode includes a plurality of conductive segments separated from each other and facing the first electrode. An RF power supply is configured to apply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma by the RF electric field. A DC power supply is configured to apply a DC voltage to at least one of the segments of the second electrode.



Abatement of reaction gases from gallium nitride deposition

Tue, 26 May 2015 08:00:00 EDT

Systems for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, or for wafers. The equipment is optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. The method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber to form the semiconductor material; removing exhaust gases including unreacted Group III precursor, unreacted Group V component and reaction byproducts; and heating the exhaust gases to a temperature sufficient to reduce condensation thereof and enhance manufacture of the semiconductor material. Advantageously, the exhaust gases are heated to sufficiently avoid condensation to facilitate sustained high volume manufacture of the semiconductor material.



Method for perfusing a biocompatible material graft with a liquid and perfusion kit

Tue, 26 May 2015 08:00:00 EDT

A method for perfusing a biocompatible material graft with a perfusion liquid includes the steps of: introducing the graft (100) in a perfusion chamber (2), arranging a transfer chamber (3) partly filled with the perfusion liquid (101), coupling in a tight manner the perfusion chamber (2) and the transfer chamber (3) for establishing a fluid communication between them, lowering the pressure in the transfer chamber (3) for transferring therein part of the air existing in the perfusion chamber (2), increasing the pressure within the transfer chamber (3) for injecting in the perfusion chamber (2) the perfusion liquid (101) existing in the transfer chamber (3). A perfusion kit includes a perfusion chamber (2) apt to contain a graft (100) to be perfused with a liquid (101) and a transfer chamber (3) apt to contain a liquid (101) to be perfused, the perfusion chamber (2) being connectable in a tight manner with the transfer chamber (3) for allowing a fluid exchange between the two chambers (2, 3) and inhibiting a fluid exchange between the two chambers (2, 3) and the external environment.



Holding assembly for a lens

Tue, 19 May 2015 08:00:00 EDT

A holding device (1) holds a lens (6) at its lens edge (5) with the aid of an adhesive connection (16, 17). The adhesive connection (16, 17) is applied only at one adhesive point or only at two spaced apart adhesive points (16, 17). Each holding device (1) provided with a lens (6) is positioned on the dip frame in such a manner that the lens (6) is positioned above its holding device (1). A method is provided for finishing lenses (6) wherein the lenses (6) are subjected to various sequential finishing steps of a finishing process and the lenses (6) are cemented to the same holding device during finishing. The application of adhesive is only at one adhesive point or at two spaced apart adhesive points (16, 17).



Methodology for forming pnictide compositions suitable for use in microelectronic devices

Tue, 19 May 2015 08:00:00 EDT

The present invention provides methods for making pnictide compositions, particularly photoactive and/or semiconductive pnictides. In many embodiments, these compositions are in the form of thin films grown on a wide range of suitable substrates to be incorporated into a wide range of microelectronic devices, including photovoltaic devices, photodetectors, light emitting diodes, betavoltaic devices, thermoelectric devices, transistors, other optoelectronic devices, and the like. As an overview, the present invention prepares these compositions from suitable source compounds in which a vapor flux is derived from a source compound in a first processing zone, the vapor flux is treated in a second processing zone distinct from the first processing zone, and then the treated vapor flux, optionally in combination with one or more other ingredients, is used to grow pnictide films on a suitable substrate.



Forming oriented film for magnetic recording material

Tue, 19 May 2015 08:00:00 EDT

An apparatus and associated method for reorienting the magnetic anisotropy of magnetic recording discs. A pallet that is moveable along a path of travel is also sized to selectively hold either a first magnetic recording disc of a first size or a second magnetic recording disc of a second size different than the first size. A first processing chamber in the path of travel is adapted for forming a soft underlayer (SUL) of magnetic material with non-radially oriented magnetic anisotropy on a substrate corresponding to one of the first and second magnetic recording discs. A second processing chamber in the path of travel downstream of the first processing chamber is adapted for selectively re-orienting the SUL's magnetic anisotropy via a magnetic source emanating a first magnetic field if the substrate corresponds to the first magnetic recording disc and emanating a different second magnetic field if the substrate corresponds to the second magnetic recording disc.



Temperature controlled showerhead for high temperature operations

Tue, 19 May 2015 08:00:00 EDT

A temperature controlled showerhead assembly for chemical vapor deposition (CVD) chambers enhances heat dissipation to provide accurate temperature control of the showerhead face plate and maintain temperatures substantially lower than surrounding components. Heat dissipates by conduction through a showerhead stem and removed by the heat exchanger mounted outside of the vacuum environment. Heat is supplied by a heating element inserted into the steam of the showerhead. Temperature is controlled using feedback supplied by a temperature sensor installed in the stem and in thermal contact with the face plate.



Solid precursor sublimator

Tue, 19 May 2015 08:00:00 EDT

An apparatus and method for holding a solid precursor in a sublimator such that the solid precursor can be vaporized for saturating a carrier gas. The apparatus may include alternating disks or shelves that form inner and outer passages, as well as spaces between the disks for fluidicly coupling the passages to create a winding, tortuous fluid flow path through the sublimator for optimizing solid vapor saturation. The method may include directing a carrier gas into a sublimation chamber, around the first shelf in the outer passage, over the first shelf in the space, around the second shelf in the inner passage, and back out of the sublimation chamber.



Target structure used for generating charged particle beam, method of manufacturing the same and medical appliance using the same

Tue, 19 May 2015 08:00:00 EDT

Provided are a target structure used for generating a charged particle beam, a method of manufacturing the same, and a medical appliance using the same. The target structure includes a target layer and a support having a through hole used as a progressing path of a laser beam or a charged particle beam.



Chemical delivery system

Tue, 19 May 2015 08:00:00 EDT

Embodiments of chemical delivery systems disclosed herein may include an enclosure; a first compartment disposed within the enclosure and having a plurality of first conduits to carry a first set of chemical species, the first compartment further having a first draw opening and a first exhaust opening to facilitate flow of a purge gas through the first compartment; and a second compartment disposed within the enclosure and having a plurality of second conduits to carry a second set of chemical species, the second compartment further having a second draw opening and a second exhaust opening to facilitate flow of the purge gas through the second compartment, wherein the first set of chemical species is different than the second set of chemical species, and wherein a draw velocity of the purge gas through the second compartment is higher than the draw velocity of the purge gas through the first compartment.



Substrate processing method

Tue, 19 May 2015 08:00:00 EDT

A method for processing a plurality of substrates after forming a photosensitive film on each substrate includes carrying each substrate into a placement buffer including a plurality of supporters by a first transport mechanism; taking out each substrate from the placement buffer to an interface by a second transport mechanism; carrying each substrate into the exposure device; carrying each substrate out of the exposure device into the placement buffer by the second transport mechanism; taking out each substrate from the placement buffer to the processing section by the first transport mechanism; performing development processing on each substrate; making each substrate stand by at the placement buffer based on timing at which the exposure device can accept each substrate; and making each substrate stand by at the placement buffer based on timing at which the developing device can accept each substrate.



Apparatus and process for plasma-enhanced atomic layer deposition

Tue, 19 May 2015 08:00:00 EDT

Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a plasma baffle assembly for receiving a process gas within a plasma-enhanced vapor deposition chamber is provided which includes a plasma baffle plate containing an upper surface to receive a process gas and a lower surface to emit the process gas, a plurality of openings configured to flow the process gas from above the upper surface to below the lower surface, wherein each opening is positioned at a predetermined angle of a vertical axis that is perpendicular to the lower surface, and a conical nose cone on the upper surface. In one example, the openings are slots positioned at a predetermined angle to emit the process gas with a circular flow pattern.



Apparatus and method for coating glass substrate

Tue, 19 May 2015 08:00:00 EDT

An apparatus and method for coating a substrate using one or more liquid raw materials, includes: at least one atomizer for atomizing the one or more liquid raw materials into droplets, charging means for electrically charging the droplets during or after the atomization and a deposition chamber in which the droplets are deposited on the substrate, the deposition chamber being provided with one or more electric fields for guiding the electrically charged droplets on the substrate. According to the invention there is a charging chamber arranged upstream of the deposition chamber and provided with charging means for electrically charging the droplets.



Die head and liquid coater

Tue, 19 May 2015 08:00:00 EDT

A die head is disclosed comprises: a feed slot which is positioned downstream of the moving direction of the substrate and continuously feed the coating solution; a gas suction slot which is positioned upstream of the moving direction of the substrate and suctions a gas so as to create vacuum in the vicinity of the upstream edge of the bead with respect to the moving direction of the substrate; and a gas ejection slot which is positioned between the feed slot and gas suction slot and ejects a gas so as to prevent inflow of the coating solution into the gas suction slot.



Device for coating substrates by means of high-velocity flame spraying

Tue, 19 May 2015 08:00:00 EDT

Proposed is a device for coating substrates by means of high-velocity flame spraying. The device comprises a combustion chamber (4), a first fuel feeder (L1) for feeding a liquid or gaseous fuel as well as at least one gas feeder for feeding an oxidative gas. The devise comprises furthermore a second fuel feeder (L5) for feeding a liquid or gaseous fuel as well as at least one further gas feeder for feeding a gas. Both the first gas feeder and the two fuel feeders (L1, L5) port into a common combustion chamber (4). In addition, means 24, 28 are provided for independent control of the fuel feed into the two fuel feeders (L1, L5).



Manufacturing apparatus for activated carbon filters

Tue, 19 May 2015 08:00:00 EDT

A manufacturing apparatus for activated carbon filters has a non-woven cloth machine, a rolling module, a sprayer and a hot-pressing cylinder. The non-woven cloth machine is used to manufacture a body of non-woven cloth and has a processing segment. The rolling module is mounted at the processing segment to heat and melt the body of non-woven cloth. The sprayer is mounted above the rolling module to spray activated carbon powder on the body of non-woven cloth. The hot-pressing cylinder is mounted at the processing segment to heat and press the activated carbon powder with the body of non-woven cloth. The activated carbon powder can be securely attached to the body of non-woven cloth by the manufacturing apparatus to provide a preferred quality of the activated carbon filters and to reduce the cost of manufacturing the activated carbon filters.



Atomic layer deposition apparatus

Tue, 12 May 2015 08:00:00 EDT

A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.



Woven mesh form liquid control apparatus

Tue, 12 May 2015 08:00:00 EDT

A liquid control apparatus that controls a spread of a liquid has a main body that has a supply subject surface onto which the liquid is supplied. The apparatus also has a mesh form body that is woven into a mesh form and provided to contact the supply subject surface and a guiding member that is provided to contact an opposite side of the mesh form body to the main body side.



Method and system for forming absorber layer on metal coated glass for photovoltaic devices

Tue, 12 May 2015 08:00:00 EDT

An apparatus for forming a solar cell includes a housing defining a vacuum chamber, a rotatable substrate support, at least one inner heater and at least one outer heater. The substrate support is inside the vacuum chamber configured to hold a substrate. The at least one inner heater is between a center of the vacuum chamber and the substrate support, and is configured to heat a back surface of a substrate on the substrate support. The at least one outer heater is between an outer surface of the vacuum chamber and the substrate support, and is configured to heat a front surface of a substrate on the substrate support.



Methods of and apparatuses for measuring electrical parameters of a plasma process

Tue, 12 May 2015 08:00:00 EDT

A sensor apparatus for measuring a plasma process parameter for processing a workpiece. The sensor apparatus includes a base, an information processor supported on or in the base, and at least one sensor supported on or in the base. The at least one sensor includes at least one sensing element configured for measuring an electrical property of a plasma and may include a transducer coupled to the at least one sensing element. The transducer can be configured to receive a signal from the sensing element and convert the signal into a second signal for input to the information processor.



Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus

Tue, 12 May 2015 08:00:00 EDT

An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.



Method of manufacturing optical fiber base material and apparatus therefor

Tue, 12 May 2015 08:00:00 EDT

In a method of manufacturing an optical fiber base material including depositing soot generated by flame hydrolysis, the fluctuation band of the surface temperature of a burner fixing section including a burner holder and its fixture for burners for compounding the optical fiber base material is kept equal to or less than 80 degree C. The temperature can be controlled by a heat shield plate arranged between a burner flame and a burner fixing section and a temperature control mechanism that heats or cools the burner fixing section. Thereby the relative position between the burner and the soot deposition is stabilized, so that the manufacturing method being capable of manufacturing an optical fiber base material having a stable refractive index and the apparatus therefor can be provided.



Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

Tue, 12 May 2015 08:00:00 EDT

Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device, which perform a cleaning process on the inside of an exhaust buffer chamber even if gases are exhausted using the exhaust buffer chamber. The substrate processing apparatus includes a processing space to process a substrate on a substrate placing surface, a gas supply system to supply gases into the processing space through a side facing the substrate placing surface, an exhaust buffer chamber including a communication hole communicating with the processing space at least at a side portion of the processing space and a gas flow blocking wall extending in a blocking direction of the gases flowing through the communication hole, a gas exhaust system configured to exhaust the gases supplied into the exhaust buffer chamber, and a cleaning gas supply pipe configured to supply a cleaning gas into the exhaust buffer chamber.



Substrate processing apparatus

Tue, 12 May 2015 08:00:00 EDT

When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates.



Rotating type thin film deposition apparatus and thin film deposition method used by the same

Tue, 12 May 2015 08:00:00 EDT

A rotating type thin film deposition apparatus having an improved structure that allows continuous deposition, and a thin film deposition method used by the rotating type thin film deposition apparatus are provided. The rotating type thin film deposition apparatus includes a deposition device; a circulation running unit that runs a deposition target on a circulation track via a deposition region of the deposition device; and a support unit that supports the deposition target and moves along the circulation track. Thin layers can be precisely and uniformly formed on the entire surface of a deposition target, and since deposition is performed while a plurality of deposition targets move along a caterpillar track, a working speed is faster compared to a method involving a general reciprocating motion, and the size of the thin film deposition apparatus can be reduced.



Tape device

Tue, 12 May 2015 08:00:00 EDT

The present invention relates to a tape guiding mechanism (10) of a tape device (100). The tape device (100) comprises a strip of tape (20) having supply tape (22) and take up tape (24); a spool portion (130); a supply spool (40) disposed at the spool portion (130) for winding the supply tape (22); a take up spool (50) disposed at the spool portion (130) for winding the take up tape (24); an application tip (12); and a spool mechanism (70) for allowing the supply and the take up spools (40 & 50) to rotate such that the tape travels from the supply spool (40), around the applicator tip (120), and to the take up spool (50).



Periphery coating apparatus, periphery coating method and storage medium therefor

Tue, 12 May 2015 08:00:00 EDT

A periphery coating unit performs a scan-in process of moving a resist liquid nozzle 27 from an outside of an edge Wb of a wafer W to a position above a periphery region Wc of the wafer W while rotating the wafer W and discharging a resist liquid from the resist liquid nozzle 27; and a scan-out process of moving the resist liquid nozzle 27 from the position above the periphery region Wc of the wafer W to the outside of the edge Wb of the wafer W while rotating the wafer W and discharging the resist liquid from the resist liquid nozzle 27. Further, in the scan-out process, the resist liquid nozzle 27 is moved at a speed v2 lower than a speed v3 at which the resist liquid is moved to a side of the edge Wb of the wafer W.



Apparatus for internally restoring a pipe

Tue, 12 May 2015 08:00:00 EDT

A method of internally restoring a pipe preferably includes the steps of isolating a leaking pipe from a system of pipes; drying an interior of a leaking pipe; measuring the airflow through the leak; cleaning the interior of the leaking pipe; presealing a leak with a leak sealing media, measuring the leak flow rate after the pre-sealing; applying an internal protective coating process; and pressure testing the leaking pipe for leaks. The pipe restoration method preferably uses a control box, a media injection system, an air compressor and a coating dispensing system at an inlet of the leaking pipe. The pipe restoration method preferably uses a coating overflow receiver, a muffler and a dust collector at an exit of the leaking pipe. After the treatments, the leaking pipe becomes a restored pipe. The restored pipe is pressure tested for leaks at a working pressure rating of the pipe.



Dense phase powder coating system for containers

Tue, 12 May 2015 08:00:00 EDT

A dense phase powder coating system includes a powder supply, dense phase pump, a spray gun and a diverter valve that can be used to select between conveying powder to the spray gun or circulating the powder back to the powder supply. The diverter valve may include two pneumatically actuate valve members. In one embodiment, the powder spray gun applies powder coating material to inside surfaces of a tubular container. A spray nozzle concept also is presented having a nozzle body with a conical deflector. The spray nozzle provides an uninterrupted flow between spray nozzle outlet holes and a deflector surface. The deflector may be integrally machined with the nozzle body to provide a one piece spray nozzle.



Apparatus and method for coloring electrical wire

Tue, 12 May 2015 08:00:00 EDT

The present invention is to provide an apparatus for coloring an electrical wire to improve a visibility and design of the electrical wire. The apparatus includes a coloring device for ejecting a liquid coloring material to an outer surface of the electrical wire and a sliding device for moving relatively the coloring device in a direction perpendicular to a longitudinal direction of the electrical wire so as to color each whole outer surface of a plurality of coloring regions thereof responsive to a belt-shaped design pattern.



Heating apparatus, coating apparatus and heating method

Tue, 12 May 2015 08:00:00 EDT

A heating apparatus including: a first heating part and a second heating part between which a substrate having a coating film is disposed at a substrate position in the film thickness direction; and a distance control part which controls at least one of a first distance between the substrate position and the first heating part and a second distance between the substrate position and the second heating part.



Method and apparatus for orienting magnetic flakes

Tue, 12 May 2015 08:00:00 EDT

The invention relates to a method of aligning magnetic flakes, which includes: coating a substrate with a carrier having the flakes dispersed therein, moving the substrate in a magnetic field so as to align the flakes along force lines of the magnetic field in the absence of an effect from a solidifying means, and at least partially solidifying the carrier using a solidifying means while further moving the substrate in the magnetic field so as to secure the magnetic flakes in the carrier while the magnetic field maintains alignment of the magnetic flakes. An apparatus is provided, which has a belt for moving a substrate along a magnet assembly for aligning magnetic flakes. The apparatus also includes a solidifying means, such as a UV- or e-beam source, and a cover above a portion of the magnet assembly for protecting the flakes from the effect of the solidifying means.



Apparatus and method for improved recovery of latent fingerprints

Tue, 12 May 2015 08:00:00 EDT

Hydrating an object bearing a latent fingerprint and then selectively drying the object leaving the fingerprint hydrated. The hydrated fingerprint is then coated with cyanoacrylate ester, preferably in a heat accelerated cyanoacrylate ester vacuum chamber. Hydrating is preferably accomplished by chilling the object below a dew point and then exposing the object to humidified air to condense a thin uniform layer of water over the object and latent fingerprint. Drying is preferably done with a vacuum. After drying reaches the preferred state, the CE is heated and coats the condensation-hydrated latent fingerprint. Preferably, the method is implemented in an automated system using one computer-controlled chamber for chilling, condensing, vacuum drying, and CE coating the latent fingerprint. The operator simply puts the object in the chamber, initiates the process by computer, and is prompted by the computer to remove the recovered latent print. Prints unrecoverable by prior art means are recovered.



Solar cell module manufacturing apparatus and solar cell module manufacturing method

Tue, 05 May 2015 08:00:00 EDT

A solar cell module manufacturing apparatus includes a stage, a holding member, a moving mechanism, and a pushing member. The stage suctions a plurality of elongated solar cells that is arranged to form a solar cell module. The holding member releasably holds a portion of a solar cell to be placed on the stage. The moving mechanism moves the holding member forward and backward with respect to the stage. The moving mechanism moves the holding member backward in a state that an end portion in a front side of the cell held by the holding member that has been moved forward is suctioned on the stage, and then the portion of the cell is released by the holding member. The pushing member moves over the cell such that the pushing member pushes a lift portion of the cell down to the stage while the holding member moves backward.



Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces

Tue, 05 May 2015 08:00:00 EDT

Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces are disclosed herein. In one embodiment, a method includes depositing molecules of a gas onto a microfeature workpiece in the reaction chamber and selectively irradiating a first portion of the molecules on the microfeature workpiece in the reaction chamber with a selected radiation without irradiating a second portion of the molecules on the workpiece with the selected radiation. The first portion of the molecules can be irradiated to activate the portion of the molecules or desorb the portion of the molecules from the workpiece. The first portion of the molecules can be selectively irradiated by impinging the first portion of the molecules with a laser beam or other energy source.



Method of manufacturing semiconductor device and substrate processing apparatus

Tue, 05 May 2015 08:00:00 EDT

A method of manufacturing a semiconductor device including: mounting a substrate on a substrate mounting member that is disposed in a reaction container; heating the substrate at a predetermined processing temperature and supplying a first gas and a second gas to the substrate to process the substrate; stopping supply of the first gas and the second gas, and supplying an inert gas into the reaction container; and unloading the substrate to outside the reaction container.



Fluid bed reactor

Tue, 05 May 2015 08:00:00 EDT

Fluidized bed reactor systems for producing high purity silicon-coated particles are disclosed. A vessel has an outer wall, an insulation layer inwardly of the outer wall, at least one heater positioned inwardly of the insulation layer, a removable concentric liner inwardly of the heater, a central inlet nozzle, a plurality of fluidization nozzles, at least one cooling gas nozzle, and at least one product outlet. The system may include a removable concentric sleeve inwardly of the liner. In particular systems the central inlet nozzle is configured to produce a primary gas vertical plume centrally in the reactor chamber to minimize silicon deposition on reactor surfaces.



Process gas management for an inductively-coupled plasma deposition reactor

Tue, 05 May 2015 08:00:00 EDT

Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.



Plasma processing apparatus and semiconductor device manufacturing method

Tue, 05 May 2015 08:00:00 EDT

A plasma processing apparatus includes a processing chamber; a lower electrode provided in the processing chamber and having a base made of a conductive metal to which a high frequency power is applied, the lower electrode also serving as a mounting table for mounting thereon a target substrate; an upper electrode provided in the processing chamber to face the lower electrode; and a focus ring disposed above the lower electrode to surround the target substrate. An electrical connection mechanism is provided between the base of the lower electrode and the focus ring to electrically connect the base of the lower electrode to the focus ring through a current control element, and generates a DC current in accordance with a potential difference.



Stage apparatus and process apparatus

Tue, 05 May 2015 08:00:00 EDT

According to one embodiment, a stage apparatus includes a height control unit includes height control elements each which is drove in an upward/downward direction independently, a measuring unit which divides an upper surface of the substrate into areas, and measures a height of each of the areas. The control unit is configured to set the height of each of the areas independently by controlling a height of each of the height control elements based on a data value, determine using the measuring unit whether the height of each of the areas in the upper surface of the substrate is in a allowable range, and set the height of the area out of the allowable range again by the height control elements.



Gas wiping device

Tue, 05 May 2015 08:00:00 EDT

Provided is a gas wiping device having a box-shaped body which encloses a steel band and gas wiping nozzles, wherein it is possible to prevent splash on the steel band. A gas wiping device provided with a plating bath for storing molten metal, and a box-shaped body placed above the plating bath. The box-shaped body is provided, in the interior, with tubular members disposed along the width direction of a band-shaped body, gas wiping nozzles disposed facing one another on the respective tubular members so as to sandwich the band-shaped body, extending members disposed on both ends of gas wiping nozzle so as to extend towards the direction of gas wiping nozzle, and extending members disposed on both ends of gas wiping nozzle so as to extend towards the direction of gas wiping nozzle.



Semiconductor reaction chamber with plasma capabilities

Tue, 28 Apr 2015 08:00:00 EDT

A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.