Thu, 25 Aug 2016 08:00:00 EDTA flexible secondary battery having flexibility, wherein the flexible secondary battery is constituted by a lithium ion secondary battery, and contains one or more kind of softening agent(s) selected from acrylic-based polymers and diene-based polymers in an active substance layer of at least one of a positive electrode and a negative electrode, and the lithium ion secondary battery has an internal depressurization degree of from 10 to 1,000 Pa, is constituted.
Thu, 25 Aug 2016 08:00:00 EDTAn electronic device may have a display that is protected by a transparent cover layer. The transparent cover layer may include a laser-annealed sapphire coating on the outer surface of a glass substrate or other transparent substrate. The sapphire coating may provide the display with a hard, scratch-resistant outer surface. The sapphire coating may be formed by coating a glass substrate with a thin film of amorphous aluminum oxide. The aluminum oxide thin film may be locally heated to transform the amorphous aluminum oxide into alpha-phase aluminum oxide (sapphire). Local heating may be achieved by laser annealing the aluminum oxide coating with a carbon dioxide laser. The laser may produce laser light having a wavelength that is absorbed in the aluminum oxide coating without being absorbed by the glass substrate so that the glass substrate is not damaged during the laser annealing process.
Thu, 25 Aug 2016 08:00:00 EDTAn OLED device and a preparation method thereof, and a display device are provided. The OLED device comprises a substrate and a plurality of functional layers disposed sequentially on the substrate. One functional layer of the plurality of functional layers is a transition functional layer, the transition functional layer comprises a first sub-layer and a second sub-layer provided on the first sub-layer, the first sub-layer and the second sub-layer are made of a same material; and the first sub-layer is prepared by using a first process, and the second sub-layer is prepared by using a second process different from the first process.
Thu, 25 Aug 2016 08:00:00 EDTOLED panels and techniques for fabricating OLED panels are provided. Multiple cuts may be made in an OLED panel to define a desired shape, as well as the location and shape of external electrical contacts. The panel may be encapsulated before or after being cut to a desired shape, allowing for greater flexibility and efficiency during manufacture.
Thu, 25 Aug 2016 08:00:00 EDTAn inexpensive display device, as well as an electrical apparatus employing the same, can be provided. In the display device in which a pixel section and a driver circuit are included on one and the same insulating surface, the driver circuit includes a decoder 100 and a buffer section 101. The decoder 100 includes a plurality of NAND circuits each including p-channel TFTs 104 to 106 connected to each other in parallel and other p-channel TFTs 107 to 109 connected to each other in series. The buffer section 101 includes a plurality of buffers each including three p-channel TFTs 114 to 116.
Thu, 25 Aug 2016 08:00:00 EDTThe present invention provides an OLED packaging method and structure. The method includes the following steps: providing an OLED substrate (1) and a package cover (4) and forming an alignment mark on the package cover (4); forming a circle of patternized desiccant layer (3) on the package cover (4); coating a circle of frame resin (5) on the package cover (4) at an outer side of the desiccant layer (3); attaching the package cover (4) and the OLED substrate (1) to each other; and subjecting the frame resin (5) to irradiation of a UV light source or heating for curing so as to complete packaging of the OLED substrate (1) with he package cover (4).
Thu, 25 Aug 2016 08:00:00 EDTThe present invention provides an OLED package method and an OLED package structure. The method comprises steps of: providing a substrate (1) to be packaged, and a package cover plate (2); forming an inorganic protective frame (11) in a round at the edges of the substrate (1); manufacturing an OLED element (12) on the substrate (1) inside the inorganic protective frame (11); pasting a solid glue film (21) on the package cover plate (2); forming an adhesive (22) in a round on the package cover plate (2) corresponding to a location of the inorganic protective frame (11); oppositely attaching the substrate (1) and the package cover plate (2), and the substrate (1) and the package cover plate (2) are affixed together by the solid glue film (21) and the adhesive (22) to accomplish the package to the substrate (1) with the package cover plate (2).
Thu, 25 Aug 2016 08:00:00 EDTThe present invention provides an OLED package method and an OLED package structure. The method comprises steps of: step 1, providing a package cover plate (1), and a substrate (5), and the package cover plate (1) is formed with a spreading location (8) for spreading sealant (2); step 2, manufacturing a seal ring (7 or 7′) on the package cover plate (1) outside the spreading location (8); step 3, spreading the sealant (1) in a round on the spreading location (8) of the package cover plate (1); step 4, oppositely attaching the package cover plate (1) and the substrate (5); step 5, employing an UV light source to irradiate and curing the sealant (2) to accomplish the package to the substrate (5) with the package cover plate (1).
Thu, 25 Aug 2016 08:00:00 EDTThe present invention provides a packaging method of a substrate and a packaging structure. The method includes: (1) providing a substrate and a packaging cover plate; (2) coating a loop of first enclosing resin on the packaging cover plate; (3) coating a loop of second enclosing resin on an external circumferential area of the first enclosing resin on the packaging cover plate; (4) laminating the packaging cover plate and the substrate together; (5) applying ultraviolet (UV) light to irradiate the first enclosing resin and the second enclosing resin for curing; and (6) carrying out cutting operations on the substrate and the packaging cover plate to remove portions of the substrate and the packaging cover plate that contact the second enclosing resin so as to achieve packaging of the substrate with the packaging cover plate.
Thu, 25 Aug 2016 08:00:00 EDTAn organic light emitting display device has a plurality of first electrodes, intermediate layers, and second electrodes that correspond to a plurality of pixel areas. The first electrodes are spaced from one another, the second electrodes are spaced from one another, and the intermediate layers are spaced from one another. A conductive protection layer is formed over the second electrodes, and a connection electrode layer is formed over the conductive protection layer and electrically connecting the second electrodes.
Thu, 25 Aug 2016 08:00:00 EDTIn various embodiments, an optoelectronic component is provided. The optoelectronic component may include an electrode, and an organic functional layer structure formed for emitting an electromagnetic radiation or converting an electromagnetic radiation into an electric current. The electrode has a surface which is reflective with respect to the electromagnetic radiation, and wherein the organic functional layer structure is formed on or over the reflective surface of the electrode and is electrically coupled thereto. The reflective surface has a structuring.
Thu, 25 Aug 2016 08:00:00 EDTThe present invention relates to an encapsulating method of OLED substrate and an OLED structure. The encapsulating method includes steps of: step 1: providing an OLED substrate (1) and an encapsulation cover plate (3), a top surface of the OLED substrate (1) having a metal cathode (135); step 2: performing a surface treatment onto the metal cathode (135) by ion bombardment to thereby form a metal oxide layer (5) on a surface of the metal cathode (135); step 3: coating an encapsulation glue (7) and disposing a filler (9) on the encapsulation cover plate (3); step 4: oppositely disposing and bonding the encapsulation cover plate (3) and the OLED substrate (1); and step 5: curing the encapsulation glue (7) by UV light illumination and thereby realizing the encapsulation of the OLED substrate (1) by use of the encapsulation cover plate (3).
Thu, 25 Aug 2016 08:00:00 EDTAn organic electroluminescent device comprising at least two organic layers including a light emitting layer (5) and a delayed fluorescent exciplex layer (7) containing a donor compound and an acceptor compound, between a pair of electrodes (2, 9) is highly efficient in formation of a singlet excited state and enables high light emission efficiency.
Thu, 25 Aug 2016 08:00:00 EDTA light emitting display device includes a substrate including a plurality of pixels, a first electrode, a pixel defining layer on the substrate and having an opening exposing the first electrode, a light emitting layer extending along a side surface of the pixel defining layer from the first electrode in the opening of the pixel defining layer, and including a first portion located on the first electrode and a second portion located on the side surface of the pixel defining layer, the second portion having a thickness decreasing in a direction toward an upper surface of the pixel defining layer from the side surface of the pixel defining layer, a second electrode, and a leakage current blocking layer having a uniform thickness on the side surface of the pixel defining layer between the first electrode and the light emitting layer or between the light emitting layer and the second electrode.
Thu, 25 Aug 2016 08:00:00 EDTAn organic light-emitting device includes a substrate, an anode on the substrate, a hole transport region on the anode, an emission layer on the hole transport region, an electron transport region on the emission layer, and a cathode on the electron transport region, wherein the electron transport region includes an electron injection layer including a first material including at least one of a halide of an alkali metal, and a second material including at least one of a lanthanide metal and a alkaline earth metal, and wherein the cathode contacts the electron injection layer and includes a first metal including at least one of silver, gold, platinum, copper, manganese, titanium, cobalt, nickel, and tungsten, and a second metal including at least one of a lanthanide metal and an alkaline earth metal, wherein an amount of the first metal is equal to or greater than that of the second metal.
Thu, 25 Aug 2016 08:00:00 EDTA light-emitting element with high emission efficiency which includes a plurality of light-emitting layers and exhibits multi-color light emission is provided. The light-emitting element includes a first electrode, a second electrode, and an EL layer between the first electrode and the second electrode. The EL layer includes a first injection layer, a first light-emitting layer, and a second light-emitting layer in a first region, and a second injection layer, the first light-emitting layer, and the second light-emitting layer in a second region. The first light-emitting layer includes a first light-emitting material and a first host material, and the second light-emitting layer includes a second light-emitting material and a second host material. A color of light emitted from the first region is different from that of light emitted from the second region.
Thu, 25 Aug 2016 08:00:00 EDTA light-emitting element with high emission efficiency which includes fluorescent materials is provided. The light-emitting element includes a first light-emitting layer and a second light-emitting layer. The first light-emitting layer includes a first fluorescent material and a first host material, and the second light-emitting layer includes a second fluorescent material and a second host material. The second host material includes a first organic compound and a second organic compound. The first organic compound and the second organic compound form an exciplex. A singlet excited energy level of the first host material is higher than a singlet excited energy level of the first fluorescent material, and a triplet excited energy level of the first host material is lower than a triplet excited energy level of the first fluorescent material.
Thu, 25 Aug 2016 08:00:00 EDTA novel light-emitting element is provided. Alternatively, a novel light-emitting element which can achieve both high efficiency and a long lifetime is provided. The light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting element includes a first light-emitting layer and a second light-emitting layer. The first light-emitting layer includes a fluorescent material. The second light-emitting layer includes a phosphorescent material. A difference in peak value between a first emission spectrum of light from the first light-emitting layer and a second emission spectrum of light from the second light-emitting layer is 30 nm or less.
Thu, 25 Aug 2016 08:00:00 EDTAn organic electroluminescent display device comprising a substrate, a hole injection layer, a hole transport layer and an electron blocking layer arranged on the substrate successively, wherein the material of the hole transport layer is a material with P-type doping.
Thu, 25 Aug 2016 08:00:00 EDTThe present invention provides an OLED pixel structure, comprising: red, green and blue sub pixels, and the red sub pixel comprises a red light emitting layer, and the green sub pixel comprises a green light emitting layer, and the blue sub pixel comprises a blue light emitting layer, and material of the blue light emitting layer comprises inorganic quantum dots, and the blue light emitting layer emits white light, and a blue light filter is located corresponding to the blue sub pixel. By the blue sub pixel utilizing inorganic quantum dots+blue light filter, the stability and the life time of the OLED elements have been obviously promoted. The present invention further adds a white sub pixel, and the white sub pixel comprises a white light emitting layer, and material of the white light emitting layer comprises inorganic quantum dots. With the added white sub pixel, the luminous efficiency of the OLED is raised and the energy consumption thereof is reduced.
Thu, 25 Aug 2016 08:00:00 EDTAn organic electroluminescent device includes a pair of electrodes; and an organic layer between the pair of electrodes, which includes a light-emitting layer, wherein the organic layer contains a compound represented by the following formula (I); and the light-emitting layer contains a iridium complex phosphorescent material: wherein R1, R2, R3, R4, R5, R6, R7 and R8 each represents a hydrogen atom or a substituent, and contiguous substituents of R1 to R8 may be bonded to each other to form a condensed ring; R9 represents an alkyl group, an alkenyl group, an aryl group, a hetero-aryl group, or a silyl group, and each of which group may be substituted with a substituent; and at least one of R1 to R9 represents a deuterium atom or a substituent containing a deuterium atom.
Thu, 25 Aug 2016 08:00:00 EDTThe present invention relates to an organic light emitting compound and an organic light emitting device comprising the same, and the organic light emitting device employing the organic light emitting compound according to the present invention can be driven at a lower voltage than existing devices employing a phosphorescent host material, and has excellent power efficiency, improved light emission efficiency, and long lifespan characteristics.
Thu, 25 Aug 2016 08:00:00 EDTAn organic light-emitting device including: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer, wherein the organic layer further includes: i) a hole transport region between the first electrode and the emission layer, the hole transport region including at least one selected from a hole transport layer, a hole injection layer, and a buffer layer, and ii) an electron transport region between the emission layer and the second electrode, the electron transport region including an electron transport layer and at least one selected from a hole blocking layer and an electron injection layer; and wherein the electron transport region includes a compound represented by Formula 1 or a compound represented by Formula 2:
Thu, 25 Aug 2016 08:00:00 EDTThe invention provides a composition comprising at least one fluorene substituted triazine derived compound of Formula 1, as described herein, and electronic devices containing the same. Such devices have improved efficiency and better driving voltage.
Thu, 25 Aug 2016 08:00:00 EDTThe present invention suggest a novel compound for improving the capability of injecting and/or transporting a hole in a light-emitting element, and a light-emitting element and an electronic device including the same, and may improve the light-emitting efficiency of the light-emitting element, and increase the lifespan thereof. In addition, the present invention may improve thermal stability (heat resistance) of the light-emitting element.
Thu, 25 Aug 2016 08:00:00 EDTA charge-transporting varnish which contains a charge-transporting substance containing fluorine atoms, a charge-transporting substance containing no fluorine atoms, a dopant substance composed of a heteropolyacid, and an organic solvent. The charge-transporting substance containing fluorine atoms is a polymer which is obtained by condensing a triaryl amine compound, an arylaldehyde compound containing fluorine atoms, a fluorene derivative having a carbonyl group and a carbazole derivative having an alkyl group or an alkyl group containing an ether structure in the N-position, and which has a weight average molecular weight of 1,000-200,000. The charge-transporting substance containing no fluorine atoms is an oligoaniline compound. A thin film formed from this charge-transporting varnish is capable of providing an organic EL element having excellent luminance characteristics and durability even in cases where the thin film is used as a single layer between a positive electrode and a light emitting layer in such a manner that the thin film is in contact with the positive electrode and the light emitting layer.
Thu, 25 Aug 2016 08:00:00 EDTIn one aspect of the invention, the memristor includes a monolayer film formed of an atomically thin material, where the monolayer film has at least one grain boundary (GB), a first electrode and a second electrode electrically coupled with the monolayer film to define a memristor channel therebetween, such that the at least one GB is located in the memristor channel, and a gate electrode capacitively coupled with the memristor channel.
Thu, 25 Aug 2016 08:00:00 EDTReversible phase transitions of exceptional magnitude may be induced in correlated metal oxides by altering their chemical compositions through reversible introduction of dopant ions and electronic carriers into the correlated metal oxides. One or more catalyst electrodes may be deposited onto a surface of a film of a correlated metal oxide such as a perovskite or a transition metal oxide. Dopant ions and electronic carriers may be electrochemically introduced into the catalyst-deposited correlated metal oxide, for example by annealing the catalyst-deposited film of correlated metal oxide in a chamber containing the dopant molecules. In this way, a reversible phase transition of about five to eight orders of magnitude may be induced.
Thu, 25 Aug 2016 08:00:00 EDTA semiconductor device includes an interconnect layer and a bottom electrode of a resistive memory device. The bottom electrode is coupled to the interconnect layer, and the bottom electrode is comprised of cobalt tungsten phosphorus (CoWP).
Thu, 25 Aug 2016 08:00:00 EDTIn a light-emitting device substrate (2), a light reflecting surface covered with an anodized aluminum layer (12) is formed on one side of a base (14), and a glass-based insulator layer (11) and electrode patterns (5-6) disposed on the first insulating layer (11) are formed on the one side of the base (14) in a region not covered with the anodized aluminum layer (12). A glass-based insulator layer (13) is formed at least on the other side of the base (14) that is opposite the one side of the base (14). Therefore, a light-emitting device substrate having high reflectivity, high heat dissipation capability, dielectric withstand capability, and long-term reliability and excellent in mass productivity can be realized.
Thu, 25 Aug 2016 08:00:00 EDTA light emitting diode including a first light emitting cell and a second light emitting cell separated from each other on a substrate, a first transparent electrode layer electrically connected to the first light emitting cell, an interconnection electrically connecting the first light emitting cell to the second light emitting cell, and a first insulation layer disposed on the first and second light emitting cells. The first transparent electrode layer is disposed on an upper surface of the first light emitting cell and partially covers a side surface of the first light emitting cell. The first insulation layer separates the first transparent electrode layer from the side surface of the first light emitting cell.
Thu, 25 Aug 2016 08:00:00 EDTA light emitting device includes a molded package and one or more light emitting components. The molded package includes a recess, two leads, and a molded resin part. A part of the recess is defined by a side wall formed from the molded resin part. At least one of the two leads includes an upper-surface portion exposed from a bottom surface of the recess. The at least one of the two leads includes a groove at an upper surface threreof. The groove is filled with a part of the molded resin part. The part of the molded resin part includes a first portion and a second portion. The first portion is exposed from the bottom surface of the recess. The second portion connects with a bottom surface of the side wall.
Thu, 25 Aug 2016 08:00:00 EDTA method of producing a contact element for an optoelectronic component includes providing an auxiliary carrier with a sacrificial layer arranged on a top side of the auxiliary carrier; providing a carrier structure having a top side and a rear side situated opposite the top side, wherein an insulation layer is arranged at the rear side of the carrier structure; connecting the sacrificial layer to the insulation layer by an electrically conductive connection layer; creating at least one blind hole extending from the top side of the carrier structure as far as the insulation layer; opening the insulation layer in a region of the at least one blind hole; arranging an electrically conductive material in the at least one blind hole; detaching the auxiliary carrier by separating the sacrificial layer; and patterning the electrically conductive connection layer.
Thu, 25 Aug 2016 08:00:00 EDTA semiconductor light emitting diode chip relates to the field of production technologies of a light emitting diode. In the present invention, corresponding graphical current extension layers are respectively disposed below an N pad and a P pad, and in all light emitting compound areas, there is electronic compound light emitting. Compared with the prior art, an area of a light emitting compound area is increased, which can effectively improve current distribution and light emitting brightness of a chip. In addition, graphical current extension can effectively increase an adhesion of a pad on a surface and improve the reliability of a chip.
Thu, 25 Aug 2016 08:00:00 EDTA semiconductor light-emitting device can include a wavelength converting layer including a surrounding portion, which covers at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a substrate, a frame located on the substrate, the chip mounted on the substrate, a transparent material layer located on the wavelength converting layer so as to reduce from the wavelength converting layer toward a light-emitting surface thereof, and a reflective material layer disposed at least between the frame and both side surfaces of the wavelength converting layer and the transparent material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency and a color variation by using the surrounding portion and an inclined side surface of transparent material layer, and therefore can emit various colored lights including white light having a high light-emitting efficiency from a small light-emitting surface.
Thu, 25 Aug 2016 08:00:00 EDTA light emitting device includes a semiconductor light emitting unit and a light-transmitting substrate. The light-transmitting substrate includes an upper surface having two long sides and two short sides and a side surface, and the semiconductor light emitting unit is disposed on the upper surface. The side surface includes two first surfaces, two second surfaces, and rough micro-structures. Each of the first surfaces is connected to one of the long sides of the upper surface, and each of the second surfaces is connected to one of the short sides of the upper surface. The rough micro-structures are formed on the first surfaces and the second surfaces, a covering rate of the rough micro-structures on each of the first surfaces is greater than or equal to a covering rate of the rough micro-structures on each of the second surfaces. A manufacturing method of the light emitting device is also provided.
Thu, 25 Aug 2016 08:00:00 EDTMethods and apparatus are provided for LED packages with surface textures. In one novel aspect, microstructures are formed on surfaces of the LED package such that light extract efficiency is improved. In one embodiment, the LED package has a silicone-encapsulating layer scattered with phosphors. In another embodiment, the LED package has a leadframe substrate. The microstructure can be micro lens, micro dents, micro pillars, micro cones, or other shapes. The microstructures can be periodically arranged or randomly arranged. In one novel aspect, the compression molding process is used to form rough surfaces. The molding block or the release film is modified with microstructures. In another novel aspect, sandblasting process is used. In one embodiment, microstructures are formed on sidewalls using the sandblasting process. The hardness, the angle, and/or the size of the blasting media are selected to improve the efficiency of the LED package.
Thu, 25 Aug 2016 08:00:00 EDTA display module comprises a circuit board having a front face, a plurality of light-emitting elements electrically coupled to the front face of the circuit board, a polymer encapsulating member adhered to the front face of the circuit board, the polymer encapsulating member substantially covering at least a portion of the circuit board and a portion of the plurality of light-emitting elements, the polymer encapsulating member substantially sealing the portion of the circuit board and the portion of the plurality of light-emitting elements, and an ultraviolet-radiation diminishing component in the polymer encapsulating member or on one or more of at least a portion of the circuit board or at least a portion of each of the light-emitting elements, wherein the ultraviolet-radiation diminishing component filters, blocks, or reflects more ultraviolet radiation than would be filtered, blocked, or reflected by the polymer encapsulating member without the ultraviolet-radiation diminishing component.
Thu, 25 Aug 2016 08:00:00 EDTA light-emitting device including a light-emitting unit, an electrode unit, and an insulating unit is provided. The light-emitting unit includes an illuminator and a packaging sealant. The illuminator generates an optical energy by way of electroluminescence, and the packaging sealant is formed on a part of a surface of the illuminator. The electrode unit includes a first electrode and a second electrode respectively formed on the surface of the illuminator on which no packaging sealant is formed. The insulating unit is formed on the surface of the light-emitting unit and includes a first insulating layer protruded between the first electrode and the second electrode. When the light-emitting device of the invention is electrically connected to an external circuit board using solder, the insulating unit effectively separates the elements to avoid the elements being short-circuited by the solder overflowing.
Thu, 25 Aug 2016 08:00:00 EDTA phosphor, which is represented by the general formula containing M, Ce, Pr, Si, and N, is provided. M is at least one element selected from the group consisting of La, Y, Tb and Lu. A molar ratio of M is greater than 2.0 and smaller than 3.5. A molar ratio of Ce is greater than 0 and smaller than 1.0. A molar ratio of Pr is greater than 0 and smaller than 0.05. A molar ratio of N is greater than 10 and smaller than 12, under the condition that a molar ratio of Si is set to 6. The phosphor further contains 10 to 10,000 ppm of fluorine.
Thu, 25 Aug 2016 08:00:00 EDTA molded package includes a recess, leads, and a molded resin part. The leads include a first lead and a second lead. A part of the recess is defined by a side wall formed from the molded resin part. At least one of the leads includes an upper-surface portion exposed from a bottom surface of the recess. The at least one of the leads includes a groove formed on an upper surface thereof partially below the side wall. The first lead includes an additional groove provided on an upper surface thereof along a side of the first lead positioned opposite a side of the second lead.
Thu, 25 Aug 2016 08:00:00 EDTA mounting substrate includes: a base; and at least one pair of wiring patterns disposed apart from each other on the base. At least one of the wiring patterns has a mounting portion, which is configured to support an electronic part thereon and which is rectangular in a plan view. The at least one of the wiring patterns defines a hole, which exposes a part of the base and which is disposed in at least a part of an outer edge of the mounting portion.
Thu, 25 Aug 2016 08:00:00 EDTAn LED integrated packaging structure is disclosed including a base; at least one LED chip which is fixedly connected on the base, the LED chip having positive and negative electrodes; an insulation layer which is disposed on surfaces of the base and the LED chip and the, wherein surfaces of the positive and negative electrodes of the LED chip are exposed from the insulation layer; at least two connecting electrodes which are disposed on the base and the LED chip.
Thu, 25 Aug 2016 08:00:00 EDTAn optoelectronic module includes a cover substrate including a passive optical element, a base substrate including an optoelectronic device, and a spacer layer joining the cover substrate to the base substrate. The spacer layer includes multiple first spacer elements fixed to a surface of the cover substrate and multiple second spacer elements fixed to a surface of the base substrate, in which each first spacer element is joined to a corresponding second spacer element through an adhesive layer, and in which the cover substrate, base substrate, and spacer layer define an interior region of the module in which the optical element is aligned with the optoelectronic device.
Thu, 25 Aug 2016 08:00:00 EDTAspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.
Thu, 25 Aug 2016 08:00:00 EDTA light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.
Thu, 25 Aug 2016 08:00:00 EDTA light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode is provided. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer located between the first-type and second-type doped semiconductor layers. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is disposed on the second-type doped semiconductor layer, and the current-blocking layer includes a main body and an extension portion extended from the main body. The current-spreading layer covers the current-blocking layer. The second electrode is electrically connected to the second-type doped semiconductor layer via the current-spreading layer, wherein the second electrode includes a bonding pad and a finger portion extended from the bonding pad, the bonding pad is located above the main body, the finger portion is located above the extension portion, and a partial region of the finger portion does not overlap the extension portion.
Thu, 25 Aug 2016 08:00:00 EDTA light emitting diode includes a light emitting structure including first and second conductive type semiconductor layers and an active layer disposed therebetween, a second hole formed through the active layer and the second conductive type semiconductor layer, and exposing the first conductive type semiconductor layer, a reflective metal layer contacting a portion of the light emitting structure, a cover metal layer contacting at least a portion of the reflective metal layer, a first insulation layer covering the reflective metal layer and the cover metal layer, an electrode layer disposed on the first insulation layer, the electrode layer covering the first insulation layer and filling the second hole, an electrode pad disposed on the light emitting structure, and a first hole formed through the first conductive type semiconductor layer and corresponding to the cover metal layer, in which the electrode pad overlaps the cover metal layer.
Thu, 25 Aug 2016 08:00:00 EDTA nitride light-emitting diode includes a substrate, an n-type nitride layer, a light-emitting layer, a p-type nitride layer, a p+ layer, an AlInN layer, an n+ layer, and an ITO transparent electrode. A tunneling structure with an AlInN intermediate layer is adopted as the contact layer, which generates polarization charges at the tunneling junction interface and maintains effective width of the depletion region, thereby increasing tunneling probability of holes and reducing contact resistances.
Thu, 25 Aug 2016 08:00:00 EDTA method according to embodiments of the invention includes providing a wafer of semiconductor devices grown on a growth substrate. The wafer of semiconductor devices has a first surface and a second surface opposite the first surface. The second surface is a surface of the growth substrate. The method further includes bonding the first surface to a first wafer and bonding the second surface to a second wafer. In some embodiments, the first and second wafer each have a different coefficient of thermal expansion than the growth substrate. In some embodiments, the second wafer may compensate for stress introduced to the wafer of semiconductor devices by the first wafer