Thu, 27 Oct 2016 08:00:00 EDTThe invention relates to the field of Light emitting device manufacturing technology, and more particularly to a light emitting device and an organic light emitting panel, the invention sets a light extraction layer comprising at least two refractive index layers stacked successively above the array substrate of the display device, and the refractive index of the at least two refractive index layers gradually decreases from the direction close to the array substrate toward the direction away from the array substrate, thereby reducing the wide-angle color shift, optimizing the display effect, and effectively reducing the blue-violet light harmful to human eye that under 435 nm to achieve the effect of protecting eye, through changing the material of the light extraction layer from organic material in traditional technologies to inorganic material.
Thu, 27 Oct 2016 08:00:00 EDTA mirror device has a light-transmissive substrate and at least one organic EL element supported on the back surface of the light-transmissive substrate, and emits light from the front surface of the light-transmissive substrate. The organic EL element has an organic layer containing a light-emitting layer layered between a light-transmissive electrode and a reflection electrode that are opposite to each other. The light-transmissive electrode is formed on the light-transmissive substrate. The mirror device has a plurality of metal mirror surface portions that each have an area smaller than the area of the light-transmissive electrode and are distributed and disposed on the front surface of the light-transmissive substrate so as to be opposite to the light-emitting layer.
Thu, 27 Oct 2016 08:00:00 EDTA display device includes a first substrate, a pixel defining layer on the first substrate, the pixel defining layer configured to define a light emission area, a first electrode in the light emission area, a light emitting layer on the first electrode, a second electrode on the light emitting layer, a second substrate which is opposite to the first substrate, and a reflecting member on a lower surface of the first substrate. The reflecting member may include a first reflecting unit on the lower surface of the first substrate, the first reflecting unit having an aperture at a position overlapping the light emission area, and a second reflecting unit on the first reflecting unit.
Thu, 27 Oct 2016 08:00:00 EDTAn optical member and a display including the same are provided. The optical member includes a first layer that includes a convex part, which includes a plurality of protrusions, and a cover having a refractive index lower than that of the convex part and a second layer that is located on at least one side of the first layer and includes a plurality of scattering particles dispersed in the interior thereof.
Thu, 27 Oct 2016 08:00:00 EDTProvided is an organic electroluminescent element including a film substrate having thereon: at least one gas barrier layer, a light scatter layer, at least one smooth layer, and a light-emitting unit containing an organic functional layer interposed between a pair of electrodes, laminated in this order, wherein the light scatter layer contains a binder and light scatter particles having an average particle size of 0.2 μm or more to less than 1 μm; and the smooth layer contains an oxide or a nitride of silicone or niobium as a main component.
Thu, 27 Oct 2016 08:00:00 EDTThe present invention relates to an organic light emitting display device. An aspect of the present invention provides an organic light emitting display device comprising a first electrode on a substrate, an organic light emitting layer on the substrate, and a second electrode including at least two layers of which a composition of compensation materials is different on the organic light emitting layer. Another aspect of the present invention provides an organic light emitting display device in which a first electrode includes two or more layers having different compositions of compensation material such that thin and double compensation layers are formed on both surfaces of an organic light emitting layer.
Thu, 27 Oct 2016 08:00:00 EDTA display device includes: a lower substrate comprising an active area, and a peripheral area outside the active area; a thin film transistor layer on the lower substrate; a plurality of pixel electrodes on the thin film transistor layer and in the active area; an encapsulating portion on the pixel electrode and encapsulating the pixel electrode; and a pattern layer comprising a plurality of patterns on the encapsulating portion, wherein the encapsulating portion covers a first area of the lower substrate and exposes a second area outside the first area, and the pattern layer comprises a crack preventing portion at the peripheral area.
Thu, 27 Oct 2016 08:00:00 EDTA display device includes a first substrate, a first emission layer disposed on the first substrate and emitted by a top emission type, a second substrate facing the first substrate and covering the first substrate, and a second emission layer disposed under the second substrate and emitted by a bottom emission type, wherein a portion of the first emission layer and a portion of the second emission layer.
Thu, 27 Oct 2016 08:00:00 EDTThe present invention provides an OLED packaging method and an OLED packaging structure. The OLED packaging method includes the following steps: providing a TFT substrate (1) and a package lid (2); forming air channels (21) on the package lid (2); forming an OLED device (11) on the TFT substrate (1); coating a loop of desiccant (12) on the TFT substrate (1) along an outer circumference of the OLED device (11) and coating a loop of a dam (13) along an outer circumference of the desiccant (12); laminating the TFT substrate (1) and the package lid (2) together; and pressing the TFT substrate (1) and the package lid (2) together and applying irradiation of ultraviolet light to cure the dam (13). The method effectively eliminates the issue of resin flushing caused by a difference of air pressures inside and outside the packaging structure in bonding the package lid and the TFT substrate so as to improve the property of water resistance, enhance mechanical strength of the packaging structure, and improve packaging effectiveness.
Thu, 27 Oct 2016 08:00:00 EDTThe present invention relates to an organic light emitting display device. An aspect of the present invention provides an organic light emitting display device comprising a first electrode on a substrate, an organic light emitting layer on the substrate, and a second electrode including at least two layers of which a composition of compensation materials is different on the organic light emitting layer.
Thu, 27 Oct 2016 08:00:00 EDTA light-emitting device includes a transparent substrate, a thin line structure formed on a portion of the transparent substrate and including thin lines which are formed in a stripe or lattice pattern, a transparent conductive layer formed on the portion of the transparent substrate where the thin line structure is formed, a light-emitting functional layer formed on a portion of the transparent conductive layer located in a light-emitting region, an electrode positioned on the light-emitting functional layer on an opposite side of the transparent conductive layer in the light-emitting region, and a sealing substrate positioned over the electrode and attached to the transparent substrate via an adhesive. The adhesive is applied to the transparent substrate such that the transparent conductive layer is not interposed between the adhesive and the transparent substrate, and that the adhesive is formed around the light-emitting region in plan view.
Thu, 27 Oct 2016 08:00:00 EDTProvided is a novel light-emitting element and a light-emitting element with high light emission efficiency. A light-emitting element at least includes a first electrode, a first light-emitting layer over the first electrode, a second light-emitting layer over and in contact with the first light-emitting layer, a third light-emitting layer over and in contact with the first light-emitting layer, and a second electrode over the third light-emitting layer. One of the first light-emitting layer and the second light-emitting layer contains at least a green-light-emitting phosphorescent compound. The other of the first light-emitting layer and the second light-emitting layer contains at least an orange-light-emitting phosphorescent compound. The third light-emitting layer contains at least a blue-light-emitting hole-trapping fluorescent compound and an organic electron-transport compound that disperses the fluorescent compound.
Thu, 27 Oct 2016 08:00:00 EDTThe present invention discloses a monochrome OLED and a method for manufacturing the same, and an OLED display panel, which can improve the performance of an OLED. A monochrome OLED according to an embodiment of the invention comprises a luminescent layer, wherein the luminescent layer comprises at least one luminescent sublayer; and at least one carrier control layer that is adjacent to the luminescent sublayer, wherein the carrier control layer is adapted to control the concentration ratio of carriers with different polarities in the luminescent layer.
Thu, 27 Oct 2016 08:00:00 EDTIn an aspect, a flexible substrate may include a base substrate, an insulating layer positioned on a first surface of the base substrate, a protective film positioned on a second surface facing the first surface of the base substrate and an adhesive layer positioned between the base substrate and the protective film and attaching the protective film on the second surface of the base substrate. The adhesive layer may include a cross-linker.
Thu, 27 Oct 2016 08:00:00 EDTA light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting layer is provided between a pair of electrodes. The light-emitting layer is a stack of a first light-emitting layer, which contains at least a first phosphorescent compound, a first organic compound having an electron-transport property, and a second organic compound having a hole-transport property and is provided on the anode side, and a second light-emitting layer, which contains at least a second phosphorescent compound and the first organic compound having an electron-transport property. A combination of the first organic compound and the second organic compound forms an exciplex.
Thu, 27 Oct 2016 08:00:00 EDTThe present invention relates to organic light-emitting devices comprising (a) an anode, (i) a cathode, and (e) an emitting layer between the anode and cathode, comprising 2 to 40% by weight of a luminescent organometallic complex X having a difference of the singlet energy (ES1(X)) and the triplet energy (ET1(X)) of smaller than 0.2 eV [Δ(ES1(X))−(ET1(X))ES1(Y)]. By doping, for example, an emitting layer containing a luminescent organometallic complex having a small S1-T1 splitting, with a fluorescent emitter the emission decay time can significantly be shortened without sacrificing external quantum efficiency (EQE) because of very efficient energy transfer.
Thu, 27 Oct 2016 08:00:00 EDTAn object of the present invention is to provide an organic EL element which has a shorter maximum luminescent wavelength, a long luminous lifespan, a low driving voltage, a small time-dependent change in driving voltage, and a small change in external extraction quantum efficiency even when being used at a high temperature. In addition, an object of the present invention is to provide a lighting device and a display device including the organic EL element. The organic EL element of the present invention is an organic EL element including: at least one luminous layer sandwiched between a positive electrode and a negative electrode, wherein the luminous layer contains at least one kind of phosphorescent organometallic complex having a structure represented by the following Formula (1):
Thu, 27 Oct 2016 08:00:00 EDTTo provide a novel heterocyclic compound that can be used as a host material in which a light-emitting substance of a light-emitting layer is dispersed. A heterocyclic compound comprising a dibenzo[f,h]quinoxaline ring and two hole-transport skeletons, where the dibenzo[f,h]quinoxaline ring and the two hole-transport skeletons are bonded to an aromatic hydrocarbon group. A heterocyclic compound represented by the following general formula (G1) is provided. Note that in the formula, A1 and A2 each independently represent any of a substituted or unsubstituted carbazole skeleton, a substituted or unsubstituted dibenzofuran skeleton, and a substituted or unsubstituted dibenzothiophen skeleton; B represents a substituted or unsubstituted dibenzo[f,h]quinoxaline skeleton; and Ar represents an arene skeleton having 6 to 13 carbon atoms. A light-emitting element including the heterocyclic compound is provided.
Thu, 27 Oct 2016 08:00:00 EDTA compound according to a formula I, devices incorporating the same, and formulations including the same are described. The compound according to the formula I can have the structure wherein R1, R2, R3, R4, R5 and R6 each represent mono, di, tri, tetra substitutions, or no substitution, R9 represents mono, di, tri substitutions, or no substitution, R1, R2, R3, R4, R5, R6 and R9 are each independently selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acid, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof. A1, A2, A3, A4, A5, and A6 are each independently selected from N or C, where at least one of A1 to A6 is N, and n is an integer from 1 to 20.
Thu, 27 Oct 2016 08:00:00 EDTThe present invention relates to organic electroluminescent devices which comprise mixtures of at least one electron-conducting material and an emitting material which has a small singlet-triplet separation.
Thu, 27 Oct 2016 08:00:00 EDTProvided are a material for an organic electroluminescent device having a high emission efficiency and an organic electroluminescent device including the same. The material for an organic electroluminescent device according to the present disclosure is represented by Formula 1: in which dibenzoheterole groups are coupled to a phenyl group of a triarylamine at the ortho positions relative to the nitrogen atom. The polarity of the molecule may be increased due to the heteroatoms of the dibenzoheterole groups, and the energy gap (e.g., HOMO-LUMO gap) of the molecule may be increased due to the large steric distortion of the molecule around the amine group. Accordingly, the emission efficiency of an organic EL device may be improved in the blue emission region.
Thu, 27 Oct 2016 08:00:00 EDTA method for manufacturing a multi-layer structure includes providing a first film with a silicon-based material layer thereon; providing a second film with the silicon-based material layer thereon; pre-treating the silicon-based material layer on each of the first and second film with an ion beam; and attaching the first film to the second film through the silicon-based material layer, such that the silicon-based materials layer on the first and second film are disposed between the first film and the second film to form the multi layers structure.
Thu, 27 Oct 2016 08:00:00 EDTDisclosed are an organic electroluminescent device (organic EL device) having improved luminous efficiency, sufficiently secured driving stability, and a simple construction, and a material for an organic EL device. The material for an organic EL device includes a carborane compound having a structure in which at least one carborane ring and at least one dibenzothiophene ring are present, and the at least one carborane ring is bonded to the at least one dibenzothiophene ring at position 1, 2, or 3. In addition, the organic EL device includes, between an anode and a cathode laminated on a substrate, at least one organic layer, in which the at least one organic layer includes the carborane compound.
Thu, 27 Oct 2016 08:00:00 EDTThe present disclosure includes a high density resistive random access memory (RRAM) device, as well as methods of fabricating a high density RRAM device. One method of forming an RRAM device includes forming a resistive element having a metal-metal oxide interface. Forming the resistive element includes forming an insulative material over the first electrode, and forming a via in the insulative material. The via is conformally filled with a metal material, and the metal material is planarized to within the via. A portion of the metal material within the via is selectively treated to create a metal-metal oxide interface within the via. A second electrode is formed over the resistive element.
Thu, 27 Oct 2016 08:00:00 EDTA method of forming a resistive memory cell, e.g., a CBRAM or ReRAM, may include forming a bottom electrode layer, forming an oxide region of an exposed area of the bottom electrode, removing a region of the bottom electrode layer proximate the oxide region to form a bottom electrode having a pointed tip or edge region, and forming first and second electrolyte regions and first and second top electrodes over the bottom electrode to define distinct first and second memory elements. The first memory element defines a first conductive filament/vacancy chain path from the first portion of the bottom electrode pointed tip region to the first top electrode via the first electrolyte region, and second memory element defines a second conductive filament/vacancy chain path from the second portion of the bottom electrode pointed tip region to the second top electrode via the second electrolyte region.
Thu, 27 Oct 2016 08:00:00 EDTA resistive memory element is provided, having a bottom electrode, a top electrode, and an active region sandwiched therebetween. The resistance memory element has a V-shape. Methods of manufacturing the V-shape resistive memory element and crossbar structures employing the V-shape resistive memory element are also provided.
Thu, 27 Oct 2016 08:00:00 EDTA resistive random access memory (RRAM) including a first electrode, a second electrode, and a variable-resistance oxide layer disposed between the first electrode and the second electrode is provided. The RRAM further includes an oxygen exchange layer, an oxygen-rich layer, and a first oxygen barrier layer. The oxygen exchange layer is disposed between the variable-resistance oxide layer and the second electrode. The oxygen-rich layer is disposed between the oxygen exchange layer and the second electrode. The first oxygen barrier layer is disposed between the oxygen exchange layer and the oxygen-rich layer.
Thu, 27 Oct 2016 08:00:00 EDTThe present invention relates generally to high current density access devices (ADs), and more particularly, to a structure and method of forming tunable voltage margin access diodes in phase change memory (PCM) blocks using layers of copper-containing mixed ionic-electronic conduction (MIEC) materials. Embodiments of the present invention may use layers MIEC material to form an access device that can supply high current-densities and operate reliably while being fabricated at temperatures that are compatible with standard BEOL processing. By varying the deposition technique and amount of MIEC material used, the voltage margin (i.e. the voltage at which the device turns on and the current is above the noise floor) of the access device may be tuned to specific operating conditions of different memory devices.
Thu, 27 Oct 2016 08:00:00 EDTA magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.
Thu, 27 Oct 2016 08:00:00 EDTA magnetoresistive element including a first magnetic layer; a first nonmagnetic layer provided on the first magnetic layer, the first nonmagnetic layer formed of SrTiO3, SrFeO3, LaAlO3, NdCoO3, or BN; and a second magnetic layer provided on the first nonmagnetic layer, wherein the first nonmagnetic layer is lattice-matched to the first magnetic layer, and the second magnetic layer is lattice-matched to the first nonmagnetic layer.
Thu, 27 Oct 2016 08:00:00 EDTA magnetoresistive element has a crystalline structural quality and magnetic anisotropy enhancement bilayer (CSMAE bilayer) with a). enhanced the crystalline structural quality, hence fabrication yield, of the resulting magnetoresistive element; and b). enhanced the magnetic anisotropy of the recording layer whereby achieving a high MR ratio for the magnetoresistive element with a simultaneous reduction of an undesirable spin pumping effect. As the magnetoresistive film is thermally annealed, a crystallization process occurs to form bcc CoFe grains having epitaxial growth with (100) plane parallel to the surface of the tunnel barrier layer as Boron elements migrate into the impurity absorbing layer. Removing the top portion of the impurity absorbing layer by means of sputtering etch or RIE etch processes followed by optional oxidization process, a thin but thermally stable portion of impurity absorbing layer is formed on top of the magnetoresistive element with a low damping constant. Accordingly, a reduced write current can be achieved for spin-transfer torque MRAM application.
Thu, 27 Oct 2016 08:00:00 EDTA magnetoresistive random-access memory (MRAM) device is disclosed. The device described herein has a spin current injection capping layer between the free layer of a magnetic tunnel junction and the orthogonal polarizer layer. The spin current injection capping layer maximizes the spin torque through very efficient spin current injection from the polarizer. The spin current injection capping layer can be comprised of a layer of MgO and a layer of a ferromagnetic material.
Thu, 27 Oct 2016 08:00:00 EDTMagnetic tunnel junction (MTJ) memory bit cells that decouple source line layout from access transistor node size to facilitate reduced contact resistance are disclosed. In one example, an MTJ memory bit cell is provided that includes a source plate disposed above and in contact with a source contact for a source node of an access transistor. A source line is disposed above and in electrical contact with the source plate to electrically connect the source line to the source node. The source plate allows the source line to be provided in a higher metal level from the source and drain contacts of the access transistor such that the source line is not in physical contact with (i.e., decoupled from) the source contact. This allows pitch between the source line and drain column to be relaxed from the width of the source and drain nodes without having to increase contact resistance.
Thu, 27 Oct 2016 08:00:00 EDTA mounting assembly (10) is disclosed for mounting and connecting an electrical device, in particular a light emitting diode. The mounting assembly (10) comprises a mounting element (12) including at least two metal layers (14, 16) each having a top surface (24) and a bottom surface (28). Top contact pads are formed at the top surface of each of the metal layers for providing a planar electrical and thermal contact to the electrical device. Bottom contact pads are formed at the bottom surface of each of the metal layers for providing a planar electrical and thermal contact to a mounting board (34).
Thu, 27 Oct 2016 08:00:00 EDTA side view LED package for a backlight unit includes a package body having a cavity with an inclined inner sidewall, first and second lead frames arranged in the package body, the cavity of the package body exposing a portion of at least one of the first and second lead frames placed in a bottom of the cavity to outside, a light emitting diode chip mounted on the bottom of the cavity to be electrically connected to the first and second lead frames, and a transparent encapsulant arranged in the cavity surrounding the light emitting diode chip. The cavity has a depth larger than a mounting height of the light emitting diode chip and not exceeding six times of the mounting height. The height of the sidewall is shortened to improve beam angle characteristics of emission light, increase light quantity, and prevent a molding defect of the sidewall.
Thu, 27 Oct 2016 08:00:00 EDTProvided is a light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer therebetween. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is on the second-type doped semiconductor layer. The current-blocking layer is between the current-spreading layer and the second-type doped semiconductor layer. The second electrode is on the current-spreading layer and electrically connected to the second-type doped semiconductor layer. The current-blocking layer has a first surface facing the semiconductor device layer, a second surface back on to the semiconductor device layer, and a first inclined surface. The first inclined surface is connected between the first surface and the second surface and tilted with respect to the first surface and the second surface.
Thu, 27 Oct 2016 08:00:00 EDTA packaged light emitting device die includes a package body having a profiled leadframe embedded in a body of reflecting material. The leadframe is exposed on mounting surface only on at least one solder bonding area. Solder is present only on the at least one solder bonding area and not elsewhere. The reflecting material provides the reflecting parts of the package so there is no need for a reflective layer to be deposited on leadframe. Moreover, the reflecting material can function as a solder resist to self-align the solder to the at least one solder bonding area.
Thu, 27 Oct 2016 08:00:00 EDTA flexible and illuminating film structure includes a flexible single polymer foil; a flexible electrically conductive pattern layer with contact areas for components on a first side of the polymer foil; at least one cavity which extends though the polymer foil from a second side to the contact areas of the conductive pattern layer on the first side and overlaps with at least one contact area; at least one non-organic light emitting diode flip-chip in the at least one cavity and electrically coupled with the contact areas; and a first flexible shielding foil layered on the second side of the polymer foil.
Thu, 27 Oct 2016 08:00:00 EDTA substrate (5A) includes an aluminum substrate body (10), a reflection layer (12) that is formed between an electrode pattern (20) which obtains electrical connection with a light emitting element (6) and the aluminum substrate body (10) and that contains first ceramics which reflect light from the light emitting element (6), and an intermediate layer (11) that contains second ceramics which are formed by thermal spraying and reinforces dielectric strength performance of the reflection layer (12).
Thu, 27 Oct 2016 08:00:00 EDTAn optical adapter device is provided to increases the luminous efficiency of a light emitting diode without reducing service life. The optical adapter device includes a transparent material with an increased refractive index, and an additional layer between the emitting surface of the semiconductor and said optical adapter device. The additional layer is formed from a material with a lower modulus of elasticity than the light emitting diode, and has a thickness that allows the tunneling of the light emitted from the light emitting diode.
Thu, 27 Oct 2016 08:00:00 EDTA semiconductor light-emitting device includes a base layer having a top surface, multiple light-transmissive members, a buffer layer, and a light-emitting epitaxial structure. The light-transmissive members are formed on the top surface of the base layer and spaced apart from one another. The buffer layer is made of a first group-III nitride material, and is formed to cover the light-transmissive members and the top surface of the base layer exposed from the light-transmissive members. The light-emitting epitaxial structure includes a first semiconductor layer formed on the buffer layer. The first semiconductor layer is made of a second group-III nitride material different from the first group-III nitride material.
Thu, 27 Oct 2016 08:00:00 EDTA conversion element includes a platelet including an inorganic glass, and first converter particles having a shell and a core, wherein the shell includes an inorganic material and the core includes a nitride or oxynitride luminescent material and the first converter particles are arranged on and/or in the platelet.
Thu, 27 Oct 2016 08:00:00 EDTA light-emitting device includes a light-emitting element emitting blue light, a green phosphor emitting green light when being excited by the blue light, and a red phosphor emitting red light when being excited by the blue light. An emission spectral peak wavelength of the green light emitted by the green phosphor is greater than or equal to 520 nm and less than or equal to 540 nm.
Thu, 27 Oct 2016 08:00:00 EDTA light emitting diode (LED) package includes a substrate having a first surface and a second surface located opposite at the first surface, an LED chip mounted on the first surface of the substrate, a reflector cup mounted on the first surface of the substrate and surrounding the LED chip therein, and an encapsulation layer located on the reflector cup. The encapsulation layer includes a glue and a plurality of quantum dots mixed in the glue. The quantum dots having a plurality of different diameters and configured to absorb light emitted from the LED chip and thereby become excited to generate light with different wavelengths from the light emitted from the LED chip.
Thu, 27 Oct 2016 08:00:00 EDTA light emitting device includes a base, a first light emitting unit, a second light emitting unit, a light conversion layer and a lens. The base has a first side slot, a second side slot, and a central slot separated from the first side slot and the second side slot, and the first side slot is formed in a separated recess configuration with a long axis and a short axis. The first light emitting unit is installed in the central slot, and the second light emitting unit is installed in the first side slot. The light conversion layer is covered onto the first light emitting unit or the second light emitting unit, and the lens covers the light conversion layer, the central slot, the first side slot, and the second side slot. The first slot and the lens have first similar contour lines in a top view.
Thu, 27 Oct 2016 08:00:00 EDTA display device and a method of manufacturing the display device are disclosed. In one aspect, the method includes forming a sacrificial layer over a carrier substrate, forming a passivation barrier layer to cover upper and lateral sides of the sacrificial layer and forming a thin film transistor layer over the passivation barrier layer. The method also includes placing a mask over the thin film transistor layer so as to expose an edge portion of the passivation barrier layer, wherein the edge portion does not overlap the mask in the depth dimension of the display device. The method further includes removing the edge portion of the passivation barrier layer so as to form a barrier layer and separating the carrier substrate from the barrier layer via the sacrificial layer.
Thu, 27 Oct 2016 08:00:00 EDTA substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
Thu, 27 Oct 2016 08:00:00 EDTA light emitting device includes a light emitting element, a p-side and an n-side post electrode. The light emitting element includes a semiconductor body having n-type and p-type semiconductor layers and a peripheral portion, a first edge, and a second edge. The light emitting element further includes an n-side electrode and a p-side electrode disposed on an insulating film having n-side openings and a p-side opening. The n-side electrode includes second n-contact portions electrically connected to the n-type semiconductor layer through the n-side openings. In a plan view, a p-side post electrode and at least one of the second n-contact portions are at the first edge side. An n-side post electrode electrically connected to the second n-contact portions and at least one of the second n-contact portions are at the second edge side. Fewer second n-contact portions are on the first edge side than that on the second edge side.
Thu, 27 Oct 2016 08:00:00 EDTA nitride semiconductor element includes: a substrate having a concave-convex surface; a nitride semiconductor under-layer on the substrate; and a nitride semiconductor function layer on the nitride semiconductor under-layer. The nitride semiconductor under-layer includes a concave-convex face as the surface that is composed of inclined faces which are inclined at an angle of 50° to 65° to a C-plane. The nitride semiconductor function layer is provided on the concave-convex face of the nitride semiconductor under-layer.
Thu, 27 Oct 2016 08:00:00 EDTThe present invention provides a patterned substrate for gallium nitride-based light emitting diode, comprising: a patterned substrate having patterns, wherein the plurality of patterns are circle type having diameters (d) and the distances between the centers of the patterns are pitches (p), and the cross sections of the patterns are extruded shapes and have heights (h), and wherein the value of [diameter (d)/pitch (p)] is larger than (2.6)/3, and equal or smaller than 3/3.