Thu, 23 Feb 2017 08:00:00 ESTA silicon microphone with a suspended diaphragm and a system with the same are provided, the microphone comprises: a silicon substrate provided with a back hole therein; a compliant diaphragm disposed above the back hole of the silicon substrate and separated from the silicon substrate; a perforated backplate disposed above the diaphragm with an air gap sandwiched in between; and a precisely defined support mechanism, disposed between the diaphragm and the backplate with one end thereof fixed to the edge of the diaphragm and the other end thereof fixed to the backplate, wherein the diaphragm and the backplate are used to form electrode plates of a variable condenser. The microphone with a suspended diaphragm can improve the repeatability and reproducibility in performance and can reduce the diaphragm stress induced by the substrate.
Thu, 23 Feb 2017 08:00:00 ESTA film member having a concave-convex structure is composed of a base member; a gas barrier layer formed on the base member; and a concave-convex structure layer formed on a surface of the gas barrier layer, wherein the surface of the gas barrier layer is formed of an inorganic material which is same as a material of the concave-convex structure layer, and the concave-convex structure layer is obtained from a precursor solution applied on the gas barrier layer. The film member having the concave-convex structure has an excellent adhesion property between the concave-convex structure layer and the gas barrier layer, and a high barrier property.
Thu, 23 Feb 2017 08:00:00 ESTA lighting device and a method for producing a lighting device are disclosed. In an embodiment, the lighting device includes a carrier, at least one optoelectronic illuminant arranged on the carrier, the illuminant configured to emit light into an emission area and a color scattering layer located in the emission area, the color scattering layer configured to generate a color by scattering of light at a surface of the color scattering layer facing away from the illuminant.
Thu, 23 Feb 2017 08:00:00 ESTAn organic light emitting display device includes a substrate, a display unit on the substrate, a sealing substrate on the display unit, a sealing member around the display unit and bonding the substrate and the sealing substrate, and a filler inside the sealing member and filling a gap between the substrate and the sealing substrate, wherein the filler is a non-hardening type, and a molecular weight of the filler is from about 100 kg/mol to about 5,000 kg/mol.
Thu, 23 Feb 2017 08:00:00 ESTOrganic light-emitting diode (OLED) displays and methods of manufacturing OLD displays are disclosed. In one aspect, an OLED display includes a substrate having an emission area and a non-emission area, a pixel electrode formed in the emission area, and an intermediate layer formed over the pixel electrode and including an organic emission layer. The display also includes an opposite electrode formed in the emission and non-emission areas and at least partially covering the intermediate layer. The display further includes a black matrix formed over the opposite electrode and including a first light-blocking portion formed in the non-emission area and a second light-blocking portion formed in the emission area and having light transmittance greater than that of the first light-blocking portion.
Thu, 23 Feb 2017 08:00:00 ESTA packaging structure includes a substrate; a displaying component positioned on the substrate; a packaging cover plate arranged opposite to and spaced from the substrate; a loop of first enclosing resin arranged between the substrate and the packaging cover plate to enclose the displaying component and bond the substrate and the packaging cover plate together, where the first enclosing resin contains no spacer particle; and a loop of a second enclosing resin formed on an external circumferential area of the first enclosing resin and located between the substrate and the packaging cover plate, where the second enclosing resin is arranged to have a width smaller than a width of the first enclosing resin and contains therein spacer particles that are sized to define a predetermined spacing distance between the substrate and the packaging cover plate.
Thu, 23 Feb 2017 08:00:00 ESTA flexible display device is disclosed. In one aspect, the flexible display device includes a display panel having a flat region, a boundary region, and a bending region. The flexible display device also includes a protective structure having a first portion formed under the flat region and a second portion formed under the boundary region. A thickness of the first portion is substantially uniform. A thickness of the second portion decreases along a direction from the flat region toward the bending region.
Thu, 23 Feb 2017 08:00:00 ESTA bendable device is provided. The device comprises: a display stack which comprises a window layer and at least one active layer, and a body which comprises an extendable bending region. The active layers are fixed to the window layer at the bottom side of the window layer. Edges of the window layer extend outwards in relation to the at least one active layer at two or more sides of the display stack, and the window layer is rigidly fixed to the body at the edges which extend outwards at the bottom side of the window layer. A method for assembling a bendable device comprising a display is disclosed.
Thu, 23 Feb 2017 08:00:00 ESTA display device and a method of manufacturing the same are disclosed. In one aspect, the display device includes a first substrate, a display unit disposed over the first substrate and a second substrate located over the display unit. The display device also includes a sealing portion disposed outside the display unit and between the first and second substrates, wherein the sealing portion includes a first part extending along a first edge of the first substrate, and wherein the first part comprises an outer side surface that is located on the same surface as an outer side surface of the first substrate. According to embodiments, the display device can reduce a defect rate during manufacturing.
Thu, 23 Feb 2017 08:00:00 ESTA display apparatus according to an embodiment can include a first electrode, a plurality of organic layers, a second electrode, and a metal layer disposed on a particular organic layer among the plurality of organic layers. The metal layer is configured to protect the particular organic layer from being damaged when it is exposed to a non-vacuum environment at least once during processes of stacking the organic layers on the first electrode and the second electrode on the organic layers in a vacuum environment, thereby suppressing a rise in the driving voltage of the display apparatus. Accordingly, the problems that the driving voltage of the display apparatus increases and the lifespan is shortened can be addressed.
Thu, 23 Feb 2017 08:00:00 ESTAn organic light-emitting display (OLED) device is disclosed. In one aspect, the OLED device includes a substrate including a display region and a peripheral region and a transistor disposed in the display region and including an active pattern, a gate insulation layer, a gate electrode, a source electrode, and a drain electrode. The OLED device also includes an organic light-emitting structure disposed in the display region and electrically connected to the transistor, the organic light-emitting structure including a first electrode, an organic light-emitting layer, and a second electrode, and a first wiring and a second wiring disposed in the peripheral region and configured to generate heat. The OLED device further includes an encapsulation layer disposed over the first and second wirings and the organic light-emitting structure and a heat blocking layer disposed between the first and the second wirings and the encapsulation layer to block the heat generated from the first and the second wirings.
Thu, 23 Feb 2017 08:00:00 ESTAn organic light-emitting device, including a first sub-organic light-emitting device including a first emission layer, a first common emission part, a first buffer part, a first doping part, and a first cathode part, sequentially stacked; a second sub-organic light-emitting device including a second emission layer, a second common emission part, a second buffer part, a second doping part, and a second cathode part, sequentially stacked; and a third sub-organic light-emitting device including a third common emission part, a third buffer part, a third doping part, and a third cathode part, sequentially stacked, the first through third common emission parts integrated with one another as one body, the first through third buffer parts integrated with one another as one body, the first through third doping parts integrated with one another as one body, and the first through third cathode parts integrated with one another as one body.
Thu, 23 Feb 2017 08:00:00 ESTThe present invention is directed to a process for preparing a hole transport layer in which a hole transport composition comprising a blend of a hole transport material and transition metal oxide or metal sulfide nanoparticles is deposited as a solution onto a substrate, such as an anode, and then is annealed in a subsequent step. It has been discovered that annealing the hole transport layer comprising the blend of an hole transport material and transition metal nanoparticles improves hole mobility of the hole transport layer in comparison to an identical hole transport layer that has not been subjected to an annealing step.
Thu, 23 Feb 2017 08:00:00 ESTA solid state light-emitting device comprising: a first electrode coupled to a first charge injecting layer; a second electrode coupled to a second charge injecting layer; an emissive layer comprising a perovskite material, wherein the emissive layer is provided between the first and second charge injecting layers; and wherein the bandgaps of the first and second charge injecting layers are larger than the bandgap of the emissive perovskite layer.
Thu, 23 Feb 2017 08:00:00 ESTProvided an organic electroluminescent element which is configured to comprise: a substrate; a gas barrier layer that is arranged on the substrate; a smooth layer that is mainly composed of an oxide or nitride of Ti or Zr having an amorphous structure; a first electrode; a second electrode; and an organic function layer that is sandwiched between the first electrode and the second electrode. This organic electroluminescent element is able to achieve a good balance between gas barrier properties and flexibility adequacy.
Thu, 23 Feb 2017 08:00:00 ESTConjugated polymer-based organic field-effect transistors have garnered attention since the solution processability of the semiconductor material raises the possibility of lower device fabrication costs, and considerable progress has been made on achieving high mobility systems. Further improvements in charge carrier mobility while using non-specialized deposition techniques and minimizing the volume of semiconductor used in the fabrication process are important considerations for practical implementation. Here, a method of fabricating devices is disclosed that uses a technique (for example, a scalable blade-coating technique) to cast polymer thin film devices from blend solutions with one component being the polymer semiconductor and the other being a commodity polymer. Even when mixing the semiconducting polymer with 90% polystyrene by weight, an average mobility of 2.7±0.4 cm2V−1s−1 can be obtained.
Thu, 23 Feb 2017 08:00:00 ESTAn organometallic compound represented by Formula 1: wherein, in Formula 1, groups and variables are the same as described in the specification.
Thu, 23 Feb 2017 08:00:00 ESTThis invention provides a transition metal carbene complexes and the electroluminescent application thereof. Through employing different N̂N heteroleptic ligand, the transition metal carbene complex can display wide-range color tuning ability from deep blue to red. The mentioned transition metal carbene complex can be applied in luminescent device, and the luminescent device can display wide-range color tuning ability with high luminescent efficiency while employing different N̂N heteroleptic ligand in the transition metal carbene comlex.
Thu, 23 Feb 2017 08:00:00 ESTAn object is to provide an organometallic complex whose phosphorescence characteristics can be adjusted by varying the structure of a ligand. Alternatively, an object is to provide an organometallic complex capable of emitting yellow phosphorescence with high luminance. Alternatively, an object is to provide a light-emitting device with high added value. An organometallic complex which has a structure represented by a general formula (G1) below and at least one substituent group represented by a general formula (G2) below as a phenyl group and is formed in such a way that a phenylpyrazine derivative represented by a general formula (G0) below is ortho-metalated by an ion of a Group 9 metal or of a Group 10 metal is provided. Alternatively, a light-emitting element and a light-emitting device formed including the organometallic complex are provided.
Thu, 23 Feb 2017 08:00:00 ESTDisclosed is an organic electroluminescent device having long life, while exhibiting high luminous efficiency. Also disclosed are an illuminating device and a display, each using such an organic electroluminescent device. In the organic electroluminescent device, a compound represented by the general formula (A) which is suitable as a host material for a phosphorescent metal complex is used at least in one sublayer of a light-emitting layer.
Thu, 23 Feb 2017 08:00:00 ESTAn organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer, wherein the organic layer includes a first compound selected from organometallic compounds represented by Formula 1, and a second compound selected from compounds represented by Formulae 2 and 3: M1(L1)n1(L2)(L3) Formula 1
Thu, 23 Feb 2017 08:00:00 ESTThis invention discloses iridium complexes with benzothienoquinoline, benzofuroquinoline, benzoselenophenoquinoline, and benzosiloloquinoline ligands. These complexes can be used as phosphorescent emitters in OLEDs.
Thu, 23 Feb 2017 08:00:00 ESTThere is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula (1) and a subphthalocyanine derivative represented by the following General formula (2).
Thu, 23 Feb 2017 08:00:00 ESTA mixture of carbazole and triazine derivatives that can be thermally evaporated from one crucible to fabricate thin films for electroluminescent devices is disclosed.
Thu, 23 Feb 2017 08:00:00 ESTWhen a decrease in low-grey level region (e.g., 0 to 80 grey) efficiencies of organic light emitting devices is not constant, deviation among display panels may cause color change and stain in the low luminance region. Aspects of the present disclosure are directed toward a compound to overcome this problem and an organic light-emitting device including the same. The compound may be represented by Formula 1: Organic light-emitting devices including this compound in the buffer layer were found to have improved efficiencies at low grey levels.
Thu, 23 Feb 2017 08:00:00 ESTAn organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer, wherein the organic layer includes a first compound and a second compound. The organic light-emitting device may have a high efficiency and long lifespan.
Thu, 23 Feb 2017 08:00:00 ESTAn organic light emitting display device is discussed. The organic light emitting display device can include at least two or more light emitting parts each including a light emitting layer and an electron transport layer; and a charge generation layer between the two or more light emitting parts and including an N-type charge generation layer, wherein the electron transport layer includes an electron transport compound including a functional group with high electron mobility, and the N-type charge generation layer includes a charge generation compound including a functional group for matching the energy level of the electron transport compound.
Thu, 23 Feb 2017 08:00:00 ESTAn organic light-emitting device includes: a first electrode; a second electrode; and an organic layer including an emission layer and a hole transport region between the first electrode and the second electrode, wherein the hole transport region is between the first electrode and the emission layer, and the hole transport region includes a first compound represented by Formula 1 and a second compound represented by Formula 2:
Thu, 23 Feb 2017 08:00:00 ESTAn organic light-emitting device having low-driving voltage, improved efficiency, and long lifespan includes: a first electrode; a second electrode facing the first electrode; a first layer between the first electrode and the second electrode, the first layer including a first compound; a second layer between the first layer and the second electrode, the second layer including a second compound; and a third layer between the second layer and the second electrode, the third layer including a third compound; wherein the first compound does not include a nitrogen-containing heterocyclic group comprising *═N—*′ as a ring forming moiety, and wherein the first compound, the second compound, and the third compound each independently include at least one group selected from groups represented by Formulae A to C:
Thu, 23 Feb 2017 08:00:00 ESTThe present invention relates to processes for the preparation of iodinated compounds of formula (I): (Formula (I)) wherein R1 is the same or different in each occurrence and is a substituent; m independently in each occurrence is 0, 1, 2 or 3; and X independently in each occurrence is NR2, PR2, —CR22—, —SiR22, O or S wherein R2 is the same or different in each occurrence and is a substituent.
Thu, 23 Feb 2017 08:00:00 ESTProvided is a semiconductor device which includes a semiconductor layer and an insulating layer adjacent to the semiconductor layer, in which the insulating layer is formed of a crosslinked product of a polymer compound that has a repeating unit (IA) represented by the following Formula (IA) and a repeating unit (IB) represented by the following Formula (IB); and an insulating layer-forming composition which is used for forming an insulating layer of a semiconductor device and contains a polymer compound that has the following repeating units (IA) and (IB). In Formulae, R1a and R1b each independently represent a hydrogen atom, a halogen atom, or an alkyl group. L1a, L2a, and L1b each independently represent a single bond or a linking group. X represents a crosslinkable group and YB represents a decomposable group or a hydrogen atom. m1a and m2a each independently represent an integer of 1 to 5. The symbol “*” represents a bonding position of the repeating units.
Thu, 23 Feb 2017 08:00:00 ESTIn a semiconductor storage device that is formed on a semiconductor substrate, flows a current to a recording material formed between electrodes to change a resistance value of the recording material and store information, and flows currents of different magnitudes in a high resistance change operation and a low resistance change operation, electrodes of a plurality of memory cells are electrically connected directly or via transistors to form large electrodes, the large electrodes are connected to a feeding terminal from a power source circuit, and the large electrodes are connected to large electrodes connected to a feeding terminal from a power source connected between a plurality of memory cells different from the plurality of memory cells via inter-large electrode connection transistors. By using the semiconductor storage device, a connection pattern of a feeding electrode for the memory cells can be configured according to the magnitude of a consumption current, power consumption by a voltage drop by a parasitic resistance of the feeding electrode and power consumption by charge/discharge of a parasitic capacitance around the feeding electrode can be suppressed, and performance per consumption power in read/set/reset operations can be improved.
Thu, 23 Feb 2017 08:00:00 ESTMagnetoresistive random access memory (MRAM) devices include a first magnetic layer. A tunnel barrier layer is formed on the first magnetic layer. The tunnel barrier includes first regions having a first thickness and second regions having a second thickness that is greater than the first thickness. A second magnetic layer is formed on the tunnel barrier layer.
Thu, 23 Feb 2017 08:00:00 ESTA semiconductor device includes a semiconductor element, a semiconductor substrate on which the semiconductor element is mounted, a conductive layer formed on the substrate, and a sealing resin covering the semiconductor element. The substrate is formed with a recess receding from a main surface of the substrate and including a bottom surface and first and second sloped surfaces spaced apart from each other in a first direction perpendicular to the thickness direction of the substrate. The conductive layer includes first conduction paths on the first sloped surface, second conduction paths on the second sloped surface and bottom conduction paths on the bottom surface. The second sloped surface includes exposed regions line-symmetrical to the first conduction paths with respect to a line perpendicular to both the thickness direction of the substrate and the first direction, and the second conduction paths are not disposed at the exposed regions.
Thu, 23 Feb 2017 08:00:00 ESTThe present invention provides a contact electrification effect-based back gate field-effect transistor. The back gate field-effect transistor includes: a conductive substrate; an insulating layer formed on a front face of the conductive substrate; a field-effect transistor assembly including: a channel layer, a drain and a source, and a gate; and a triboelectric nanogenerator assembly including: a static friction layer formed at a lower surface of the gate, a movable friction layer disposed opposite to the static friction layer and separated by a preset distance, and a second electro-conductive layer formed at an outside of the movable friction layer and being electrically connected to the source; wherein, the static friction layer and the movable friction layer are made of materials in different ratings in triboelectric series, and the static friction layer and the movable friction layer are switchable between a separated state and a contact state under the action of an external force.
Thu, 23 Feb 2017 08:00:00 ESTAccording to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface; an n-side electrode including a first n-side electrode and a second n-side electrode; a first contact unit; a second contact unit; an n-side interconnect unit; a p-side electrode; and an insulating film. The insulating film includes a first insulating portion, a second insulating portion, a third insulating portion, and a fourth insulating portion.
Thu, 23 Feb 2017 08:00:00 ESTA light-emitting device includes a light-emitting element; a first light transmissive member that is disposed over the light-emitting element and that includes a first upper surface, a lower surface, a first lateral surface; and a second lateral surface positioned outside the first lateral surface, a second light transmissive member that covers at least a part of the first lateral surface; and a light reflective member that is disposed on a lateral surface of the second light transmissive member, the second lateral surface of the first light transmissive member, and a lateral surface of the light-emitting element.
Thu, 23 Feb 2017 08:00:00 ESTThe present invention relates to a light-emitting diode (LED) structure, which comprises an LED unit. The LED unit is doped with a plurality of fluorescent powders in at least an arbitrary layer on one side of a light-emitting layer. Alternatively, the LED unit includes a plurality of fluorescent powder particles arranged on at least a light-emitting surface of the LED unit. No gel is adopted for disposing or packaging fluorescent powders. Thereby, gel yellowing caused by long-term high-temperature heating of the LED structure will not occur. The yellowing phenomenon will affect the light-emitting efficiency of LED and induce color deviation.
Thu, 23 Feb 2017 08:00:00 ESTA light emitting device includes a package, at least one light emitting element, a light-transmissive resin, and a light reflecting resin. The package has a recess which includes a bottom surface and an inner peripheral surface. The bottom surface includes a light emitting element mounting region and a groove. The groove has an inner peripheral edge and an outer peripheral edge on the bottom surface to define the groove between the inner peripheral edge and the outer peripheral edge. The at least one light emitting element is mounted on the light emitting element mounting region. The light-transmissive resin is provided in the recess to cover the at least one light emitting element and to be in contact with the groove. The light reflecting resin is provided between the inner peripheral surface of the recess and the light-transmissive resin to reach the outer peripheral edge of the groove.
Thu, 23 Feb 2017 08:00:00 ESTA light-emitting device includes; a photoluminescent layer that emits light; and a light-transmissive layer on which the emitted light is to be incident. At least one of the photoluminescent layer and the light-transmissive layer defines a surface structure. The surface structure has projections and/or recesses to limit a directional angle of the emitted light. The photoluminescent layer and the light-transmissive layer are curved.
Thu, 23 Feb 2017 08:00:00 ESTA light emitting device that includes a light emitting element having a peak emission wavelength at 400-480 nm and a fluorescent member can be provided. The fluorescent member includes a first fluorescent material that includes a nitride containing alkaline-earth metal, alkali metal, aluminium and europium, a second fluorescent material that includes a nitride containing alkaline-earth metal, aluminium, silicon and europium, and a third fluorescent material having a peak emission wavelength in a range of from 500 nm to 560 nm. A content of the first fluorescent material to a total content of the first fluorescent material and the second fluorescent material is from 5% by mass to 95% by mass.
Thu, 23 Feb 2017 08:00:00 ESTAn electronic device including: a substrate; a first electrically-conductive layer; a second electrically-conductive layer; and an intermediate layer. The first electrically-conductive layer is disposed on the substrate and composed of aluminum or an aluminum alloy. The second electrically-conductive layer is spaced away from the first electrically-conductive layer. The intermediate layer is disposed between the first electrically-conductive layer and the second electrically-conductive layer, is in contact with both the first electrically-conductive layer and the second electrically-conductive layer, and contains aluminum and fluorine.
Thu, 23 Feb 2017 08:00:00 ESTA light-emitting device of an embodiment of the present disclosure comprises a substrate; a semiconductor stack comprising a first type semiconductor layer, a second type semiconductor layer and an active layer formed between the first type semiconductor layer and the second type semiconductor layer, wherein the first type semiconductor layer comprises a non-planar roughened surface; a bonding layer formed between the substrate and the semiconductor stack; and multiple recesses each comprising a bottom surface lower than the non-planar roughened surface; and multiple buried electrodes physically buried in the first type semiconductor layer, wherein the multiple buried electrodes are formed in the multiple recesses respectively, and one of the multiple buried electrodes comprises an upper surface; wherein an upper surface of the buried electrode and the non-planar roughened surface of the first type semiconductor layer are substantially on the same plane.
Thu, 23 Feb 2017 08:00:00 ESTA light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first dielectric layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first dielectric layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first dielectric layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.
Thu, 23 Feb 2017 08:00:00 ESTA semiconductor ultraviolet light emitting device includes: a substrate; a buffer layer disposed on the substrate and comprising a plurality of nanorods between which a plurality of voids are formed; a first conductive nitride layer disposed on the buffer layer and having a first conductive AlGaN layer; an active layer disposed on the first conductive nitride layer and having a quantum well including AlxInyGa1-x-yN (0≦x+y≦1, 0≦y
Thu, 23 Feb 2017 08:00:00 ESTA semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.
Thu, 23 Feb 2017 08:00:00 ESTA light emitting device package assembly including a first substrate, a plurality of light emitting device packages disposed on the first substrate, and a light conversion member disposed on the light emitting device packages. Each of the light emitting device packages includes a main body disposed on the first substrate and including a first cavity, a light source disposed in the first cavity, and a first matrix disposed in the first cavity. Further, the light conversion member includes a second substrate including a plurality of second cavities, a second matrix disposed in the second cavities, and first light conversion particles disposed in the second matrix.
Thu, 23 Feb 2017 08:00:00 ESTVarious particular embodiments include a method for forming a photodetector, including: forming a structure including a barrier layer disposed between a layer of doped silicon (Si) and a layer of germanium (Ge), the barrier layer including a crystallization window; and annealing the structure to convert, via the crystallization window, the Ge to a first composition of silicon germanium (SiGe) and the doped Si to a second composition of SiGe.
Thu, 23 Feb 2017 08:00:00 ESTDevice and a method of forming a device are disclosed. The method includes providing a substrate. The substrate includes a buried oxide (BOX) layer having an initial thickness TB1 sandwiched in between a top surface layer and a base substrate. The top surface layer is processed to form one or more photonic devices and first and second isolation regions. An interlevel dielectric (ILD) layer is formed on the substrate. Through dielectric via (TDV) contacts extending from a top surface of the dielectric ILD layer to within the BOX layer of the substrate are formed. Lower and upper interconnect levels are formed on the ILD layer. A carrier substrate is provided over a top surface of the upper interconnect levels. The base substrate and a portion of the BOX layer are removed to expose a bottom surface of the TDV contacts.
Thu, 23 Feb 2017 08:00:00 ESTA Schottky barrier diode is provided, which includes a semiconductor substrate, a first well region, an isolation region, a silicide layer and a silicon oxide-containing layer. The first well region of a first conductivity type is in the semiconductor substrate. The isolation region is in the first well region. The silicide layer is laterally adjacent to the isolation region, and over and in contact with the first well region. The silicon oxide-containing layer is over and in contact with the isolation region.